InGaAsP/InP 1/4波長シフトDFBレーザの研究 InGaAsP/InP quarter-wavelength-shifted DFB lasers InGaAsP/InP yonbun no ichi hacho shifuto diefubi reza no kenkyu
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著者
書誌事項
- タイトル
-
InGaAsP/InP 1/4波長シフトDFBレーザの研究
- タイトル別名
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InGaAsP/InP quarter-wavelength-shifted DFB lasers
- タイトル別名
-
InGaAsP/InP yonbun no ichi hacho shifuto diefubi reza no kenkyu
- 著者名
-
宇佐見, 正士
- 著者別名
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ウサミ, マサシ
- 学位授与大学
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早稲田大学
- 取得学位
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博士 (工学)
- 学位授与番号
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乙第900号
- 学位授与年月日
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1992-10-22
注記・抄録
博士論文
制度:新 ; 文部省報告番号:乙900号 ; 学位の種類:博士(工学) ; 授与年月日:1992-10-22 ; 早大学位記番号:新1834 ; 理工学図書館請求番号:1566
目次
- Contents / p1 (0003.jp2)
- Chapter1 Introduction / p1 (0005.jp2)
- 1.1 Long haul optical fiber communication / p1 (0005.jp2)
- 1.2 Semiconductor lasers with mode stabilization / p5 (0007.jp2)
- 1.3 Dynamic single mode semiconductor lasers in 1.5μm range / p6 (0008.jp2)
- 1.4 Summary / p8 (0009.jp2)
- Chapter2 Quarter-wavelegth (λ/4) shifted distributed feedback (DFB) lasers / p10 (0010.jp2)
- 2.1 Theoretical analysis of DFB structure / p10 (0010.jp2)
- 2.2 Fabrication process / p23 (0016.jp2)
- 2.3 Lasing characteristics / p31 (0020.jp2)
- conclusions / p34 (0022.jp2)
- Chapter3 Reliability / p36 (0023.jp2)
- 3.1 Life-test programs and test samples / p36 (0023.jp2)
- 3.2 Variation of operating current / p40 (0025.jp2)
- 3.3 Spectral behavior / p42 (0026.jp2)
- conclusions / p46 (0028.jp2)
- Chapter4 Asymmetric structure for higher output design / p47 (0028.jp2)
- 4.1 Theoretical analysis of asymmetric structure / p47 (0028.jp2)
- 4.2 Lasing properties depending on λ/4-shift position / p51 (0030.jp2)
- 4.3 Effect of anti-reflection (AR) coating on efficiency / p54 (0032.jp2)
- 4.4 Spectral behavior / p56 (0033.jp2)
- conclusions / p58 (0034.jp2)
- Chapter5 Longitudinal mode stabilization of Three-electrode λ/4-shifted DFB laser / p59 (0034.jp2)
- 5.1 Theoretical analysis / p59 (0034.jp2)
- 5.2 Three-electrode λ/4-shifted DFB laser / p69 (0039.jp2)
- conclusions / p76 (0043.jp2)
- Chapter6 Integration of λ/4-shifted DFB laser and monitor photodiode / p78 (0044.jp2)
- 6.1 Monitor photodiode integrated λ/4-shifted DFB laser / p79 (0044.jp2)
- 6.2 Probing of lasers in wafer / p86 (0048.jp2)
- 6.3 Output power controllability by monitor photodiode / p88 (0049.jp2)
- conclusions / p92 (0051.jp2)
- Chapter7 Wavelength switching characteristics / p94 (0052.jp2)
- 7.1 Theoretical analysis of mode property / p94 (0052.jp2)
- 7.2 Wavelength switching characteristics by current injection / p97 (0053.jp2)
- 7.3 Wavelength switching characteristics by light injection / p101 (0055.jp2)
- conclusions / p103 (0056.jp2)
- Chapter8 Conclusions / p104 (0057.jp2)
- Acknowlegements / p106 (0058.jp2)
- Published papers and letters / p108 (0059.jp2)
- References / p111 (0060.jp2)
