Molecular beam epitaxy of InP using gaseous sources ガスソースを用いたInPの分子線エピタキシー成長
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Bibliographic Information
- Title
-
Molecular beam epitaxy of InP using gaseous sources
- Other Title
-
ガスソースを用いたInPの分子線エピタキシー成長
- Author
-
森下, 義隆
- Author(Another name)
-
モリシタ, ヨシタカ
- University
-
早稲田大学
- Types of degree
-
博士 (工学)
- Grant ID
-
乙第941号
- Degree year
-
1993-02-12
Note and Description
博士論文
制度:新 ; 文部省報告番号:乙941号 ; 学位の種類:博士(工学) ; 授与年月日:1993-02-12 ; 早大学位記番号:新1890 ; 理工学図書館請求番号:1616
Table of Contents
- CONTENTS / p1 (0003.jp2)
- Chapter1.INTRODUCTION / p1 (0004.jp2)
- 1.1 Historical Background / p1 (0004.jp2)
- 1.2 Purpose of This Work / p7 (0007.jp2)
- References / p11 (0009.jp2)
- Chapter2.GAS SOURCE MOLECULAR BEAM EPITAXY OF UNINTENTIONALLY DOPED InP / p13 (0010.jp2)
- 2.1 Introduction / p13 (0010.jp2)
- 2.2 Experimental / p15 (0011.jp2)
- 2.3 Electrical and Optical Properties / p22 (0015.jp2)
- 2.4 Summary / p31 (0019.jp2)
- References / p32 (0020.jp2)
- Chapter3.GAS SOURCE MOLECULAR BEAM EPITAXY OF SILICON DOPED InP USING SOLID SILICON SOURCE / p34 (0021.jp2)
- 3.1 Introduction / p34 (0021.jp2)
- 3.2 Experimental / p36 (0022.jp2)
- 3.3 Electrical Properties / p37 (0022.jp2)
- 3.4 Optical Properties / p43 (0025.jp2)
- 3.5 Summary / p50 (0029.jp2)
- References / p51 (0029.jp2)
- Chapter4.RHEED INTENSITY OSCILLATIONS DURING GAS SOURCE MOLECULAR BEAM EPITAXY OF InP I-STEADY STATE OSCILLATIONS / p52 (0030.jp2)
- 4.1 Introduction / p52 (0030.jp2)
- 4.2 Experimental / p54 (0031.jp2)
- 4.3 Observations / p55 (0031.jp2)
- 4.4 Electrical and Optical Properties / p61 (0034.jp2)
- 4.5 Summary / p62 (0035.jp2)
- References / p63 (0035.jp2)
- Chapter5.RHEED INTENSITY OSCILLATIONS DURING GAS SOURCE MOLECULAR BEAM EPITAXY OF InP II-TRANSIENT STATE OSCILLATIONS / p64 (0036.jp2)
- 5.1 Introduction / p64 (0036.jp2)
- 5.2 Experimental / p66 (0037.jp2)
- 5.3 Observations / p67 (0037.jp2)
- 5.4 Summary / p77 (0042.jp2)
- References / p78 (0043.jp2)
- Chapter6.MOLECULAR BEAM EPITAXY OF InP USING P⁺ION BEAM / p79 (0043.jp2)
- 6.1 Introduction / p79 (0043.jp2)
- 6.2 Experimental / p81 (0044.jp2)
- 6.3 Sputter Cleaning with P⁺ Ion Beam / p85 (0046.jp2)
- 6.4 Electrical and Optical Properties / p87 (0047.jp2)
- 6.5 Summary / p100 (0054.jp2)
- References / p102 (0055.jp2)
- Chapter7.CONCLUSION / p103 (0055.jp2)
- ACKNOWLEDGEMENTS / p106 (0057.jp2)
- PUBLICATION LIST / p108 (0058.jp2)
