Fundamental study on chemically vapor deposited silicon carbide for coating layer of high temperature gas-cooled reactor fuel 高温ガス炉用燃料の被覆層としての化学蒸着炭化けい素に関する基礎的研究
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Bibliographic Information
- Title
-
Fundamental study on chemically vapor deposited silicon carbide for coating layer of high temperature gas-cooled reactor fuel
- Other Title
-
高温ガス炉用燃料の被覆層としての化学蒸着炭化けい素に関する基礎的研究
- Author
-
湊, 和生
- Author(Another name)
-
ミナト, カズオ
- University
-
東京大学
- Types of degree
-
博士 (工学)
- Grant ID
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乙第10650号
- Degree year
-
1992-03-16
Note and Description
博士論文
Table of Contents
- Contents / p1 (0003.jp2)
- 1.Introduction / p1 (0006.jp2)
- 1.1.Concept of high temperature gas-cooled reactor fuel / p2 (0007.jp2)
- 1.2.Roles of SiC coating layer / p4 (0008.jp2)
- 1.3.Previous studies on SiC coating layer / p5 (0008.jp2)
- 1.4.Aims of the present study / p9 (0010.jp2)
- References / p10 (0011.jp2)
- 2.Chemical Vapor Deposition of SiC / p14 (0013.jp2)
- 2.1.Introduction / p14 (0013.jp2)
- 2.2.Experimental / p15 (0013.jp2)
- 2.3.Thermodynamic analysis / p25 (0018.jp2)
- 2.4.Modeling of CVD processes / p33 (0022.jp2)
- 2.5.Discussion / p36 (0024.jp2)
- 2.6.Summary / p47 (0029.jp2)
- Appendix / p48 (0030.jp2)
- References / p50 (0031.jp2)
- 3.Structure of SiC Layers / p54 (0033.jp2)
- 3.1.Introduction / p54 (0033.jp2)
- 3.2.Experimental / p55 (0033.jp2)
- 3.3.Results and discussion / p58 (0035.jp2)
- 3.4.Summary / p71 (0041.jp2)
- References / p72 (0042.jp2)
- 4.Mechanical Properties of SiC Layers at Room Temperature / p74 (0043.jp2)
- 4.1.Introduction / p74 (0043.jp2)
- 4.2.Experimental / p75 (0043.jp2)
- 4.3.Results and discussion / p80 (0046.jp2)
- 4.4.Summary / p86 (0049.jp2)
- References / p87 (0049.jp2)
- 5.Mechanical Properties of SiC Layers at High Temperatures / p88 (0050.jp2)
- 5.1.Introduction / p88 (0050.jp2)
- 5.2.Experimental / p89 (0050.jp2)
- 5.3.Results and discussion / p91 (0051.jp2)
- 5.4.Summary / p98 (0055.jp2)
- References / p98 (0055.jp2)
- 6.Chemical Interaction of SiC Layers with Palladium / p100 (0056.jp2)
- 6.1.Introduction / p100 (0056.jp2)
- 6.2.Experimental / p101 (0056.jp2)
- 6.3.Results / p104 (0058.jp2)
- 6.4.Discussion / p116 (0064.jp2)
- 6.5.Summary / p122 (0067.jp2)
- References / p122 (0067.jp2)
- 7.Chemical Interaction of SiC Layers with Carbon Monoxide / p126 (0069.jp2)
- 7.1.Introduction / p126 (0069.jp2)
- 7.2.Experimental / p127 (0069.jp2)
- 7.3.Results / p129 (0070.jp2)
- 7.4.Discussion / p138 (0075.jp2)
- 7.5.Summary / p147 (0079.jp2)
- References / p148 (0080.jp2)
- 8.Chemical Interaction of SiC Layers with Metallic Impurities / p151 (0081.jp2)
- 8.1.Introduction / p151 (0081.jp2)
- 8.2.Experimental / p152 (0082.jp2)
- 8.3.Results / p154 (0083.jp2)
- 8.4.Discussion / p158 (0085.jp2)
- 8.5.Summary / p161 (0086.jp2)
- References / p161 (0086.jp2)
- 9.Conclusions / p163 (0087.jp2)
- Acknowledgements / p167 (0089.jp2)
- List of Published Papers / p168 (0090.jp2)