Study of doped semiconductors near the metal-insulator transition through magnetization measurement 磁化測定による金属・絶縁体転移近傍における不純物半導体の研究
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Bibliographic Information
- Title
-
Study of doped semiconductors near the metal-insulator transition through magnetization measurement
- Other Title
-
磁化測定による金属・絶縁体転移近傍における不純物半導体の研究
- Author
-
松永, 悟明
- Author(Another name)
-
マツナガ, ノリアキ
- University
-
東京大学
- Types of degree
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博士 (理学)
- Grant ID
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甲第9347号
- Degree year
-
1992-03-30
Note and Description
博士論文
Table of Contents
- Contents / p1 (0003.jp2)
- 1 Introduction / p1 (0004.jp2)
- 1.1 Metal-Insurator Transition / p1 (0004.jp2)
- 1.2 Thermodynamic Property / p5 (0006.jp2)
- 2 Experiment / p9 (0008.jp2)
- 2.1 Sample / p9 (0008.jp2)
- 2.2 Magnetometer / p10 (0009.jp2)
- 2.3 Thermometry / p11 (0009.jp2)
- 2.4 Susceptibility of³He-⁴He Mixture / p12 (0010.jp2)
- 3 Results / p14 (0011.jp2)
- 3.1 Susceptibility of Pure Si / p14 (0011.jp2)
- 3.2 Susceptibility of Si:P / p16 (0012.jp2)
- 3.3 Magnetization of Si:P / p17 (0012.jp2)
- 3.4 Susceptibility of Ge:Sb / p17 (0012.jp2)
- 4 Theories / p19 (0013.jp2)
- 4.1 Donor Wave Function / p19 (0013.jp2)
- 4.2 Exchange Interaction / p20 (0014.jp2)
- 4.3 Bhatt and Lee Model / p21 (0014.jp2)
- 4.4 Bhatt-Lee Model in High Magnetic Fields / p24 (0016.jp2)
- 4.5 Disorder and Interaction in Metal / p24 (0016.jp2)
- 5 Discussions / p27 (0017.jp2)
- 5.1 Low Concentration Region / p27 (0017.jp2)
- 5.2 Intermediate Concentration Region / p29 (0018.jp2)
- 5.3 Lightly Metallic Region / p31 (0019.jp2)
- 5.4 Concentration Dependence / p34 (0021.jp2)
- 5.5 Comparison of Si:P and Ge:Sb / p36 (0022.jp2)
- 6 Conclusions / p38 (0023.jp2)
- A Exchange Interaction of Shallow Donors / p41 (0024.jp2)
