Quantum microstructure lasers : fabrication technologies and device physics 量子マイクロ構造レーザ : 作製技術とデバイス物理

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著者

    • 高橋, 琢二 タカハシ, タクジ

書誌事項

タイトル

Quantum microstructure lasers : fabrication technologies and device physics

タイトル別名

量子マイクロ構造レーザ : 作製技術とデバイス物理

著者名

高橋, 琢二

著者別名

タカハシ, タクジ

学位授与大学

東京大学

取得学位

博士 (工学)

学位授与番号

甲第9477号

学位授与年月日

1992-03-30

注記・抄録

博士論文

目次

  1. Contents / p7 (0008.jp2)
  2. Preface / p3 (0004.jp2)
  3. Acknowledgements / p4 (0005.jp2)
  4. Abstract / p6 (0007.jp2)
  5. Contents / p7 (0008.jp2)
  6. Chapter I Introduction / p1 (0013.jp2)
  7. 1.1.Background of This Study / p1 (0013.jp2)
  8. 1.2.Motivation and Objectives of This Study / p4 (0016.jp2)
  9. 1.3.Synopses of This Thesis / p6 (0018.jp2)
  10. Part I Fabrication Technologies of Quantum Microstructures / p8 (0020.jp2)
  11. Chapter II Introduction of Part I / p9 (0021.jp2)
  12. Chapter III Electron Beam Induced Metalorganic Chemical Vapor Deposition System / p11 (0023.jp2)
  13. Chapter IV Selective Growth by Electron Beam Irradiation / p13 (0025.jp2)
  14. 4.1.Fabrication of Wire and Dot Structures / p13 (0025.jp2)
  15. 4.2.Elemental Analysis / p16 (0028.jp2)
  16. 4.3.Dependences on Growth Conditions / p19 (0031.jp2)
  17. 4.4.Growth Mechanisms / p29 (0041.jp2)
  18. 4.5.Selective Growth by Pulse Mode Supply of Source Materials / p32 (0044.jp2)
  19. 4.6.Concluding Remarks / p35 (0047.jp2)
  20. Chapter V In situ Selective Growth Using Contamination Resists / p36 (0048.jp2)
  21. 5.1.Growth Processes / p36 (0048.jp2)
  22. 5.2.Formation of Contamination Resists by Electron Beam / p38 (0050.jp2)
  23. 5.3.Fabrication of GaAs Wire Structures / p40 (0052.jp2)
  24. 5.4.Elemental Analysis of Contamination Resists / p43 (0055.jp2)
  25. 5.5.Formation Mechanisms of Contamination Resists / p48 (0060.jp2)
  26. 5.6.Concluding Remarks / p50 (0062.jp2)
  27. Chapter VI Summary of Part I / p51 (0063.jp2)
  28. Part II Theoretical Analysis of Lasing Characteristics in Quantum Microstructure Lasers / p52 (0064.jp2)
  29. Chapter VII Introduction of Part II / p53 (0065.jp2)
  30. Chapter VIII Orientation Dependence of Lasing Characteristics in Quantum Well Lasers / p55 (0067.jp2)
  31. 8.1.Introduction / p55 (0067.jp2)
  32. 8.2.Tight Binding Theory / p57 (0069.jp2)
  33. 8.3.Energy Band Structures / p59 (0071.jp2)
  34. 8.4.Orientation Dependence of Gain Properties / p64 (0076.jp2)
  35. 8.5.Differential Gain Properties / p67 (0079.jp2)
  36. 8.6.Spectral Properties / p69 (0081.jp2)
  37. 8.7.Effective Masses / p71 (0083.jp2)
  38. 8.8.Concluding Remarks / p77 (0089.jp2)
  39. Chapter IX Lasing Characteristics in Quantum Well Box Lasers / p78 (0090.jp2)
  40. 9.1.Introduction / p78 (0090.jp2)
  41. 9.2.Concept and Modeling of Quantum Well Box Lasers / p80 (0092.jp2)
  42. 9.3.Gain Properties and Threshold Current / p83 (0095.jp2)
  43. 9.4.Modulation Dynamics / p88 (0100.jp2)
  44. 9.5.Spectral Properties / p91 (0103.jp2)
  45. 9.6.Modulation Doping Effects / p95 (0107.jp2)
  46. 9.7.Size Fluctuation Effects on Lasing Characteristics / p98 (0110.jp2)
  47. 9.8.Concluding Remarks / p100 (0112.jp2)
  48. Chapter X Optical Nonlinear Effects in Quantum Microstructure Lasers / p101 (0113.jp2)
  49. 10.1.Introduction / p101 (0113.jp2)
  50. 10.2.Theory of Nonlinear Gain Effects / p103 (0115.jp2)
  51. 10.3.Nonlinear Gain Effects in Quantum Well Lasers / p106 (0118.jp2)
  52. 10.4.Nonlinear Gain Effects in Quantum Well Wire and Box Lasers / p128 (0140.jp2)
  53. 10.5.Concluding Remarks / p138 (0150.jp2)
  54. Chapter XI Summary of Part II / p139 (0151.jp2)
  55. Chapter XII Conclusions / p141 (0153.jp2)
  56. References / p144 (0156.jp2)
  57. Publication List / p166 (0178.jp2)
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各種コード

  • NII論文ID(NAID)
    500000098593
  • NII著者ID(NRID)
    • 8000000098822
  • DOI(NDL)
  • NDL書誌ID
    • 000000262907
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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