Analysis of defects in liquid encapsulated Czochralski grown indium-doped GaAs crystals by two optical beam method 二光束法によるIndium-doped LEC GaAs単結晶内欠陥の研究
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著者
書誌事項
- タイトル
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Analysis of defects in liquid encapsulated Czochralski grown indium-doped GaAs crystals by two optical beam method
- タイトル別名
-
二光束法によるIndium-doped LEC GaAs単結晶内欠陥の研究
- 著者名
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坂井, 一文
- 著者別名
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サカイ, カズフミ
- 学位授与大学
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学習院大学
- 取得学位
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博士 (理学)
- 学位授与番号
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乙第67号
- 学位授与年月日
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1993-03-09
注記・抄録
博士論文
目次
- Contents/p1 (3コマ目)
- I.Introduction/p5 (5コマ目)
- II.Apparatus and observations/p10 (8コマ目)
- -Samples/p12 (10コマ目)
- -Apparatus of light scattering tomography/p14 (11コマ目)
- -Layer-by-layer tomography/p16 (12コマ目)
- -Three dimensional structure of the dislocation lines/p19 (13コマ目)
- III.Light scattering process/p26 (17コマ目)
- IV.Determination of resonance scattering frequency by three lasers/p42 (26コマ目)
- -Formulation of the resonance/p43 (27コマ目)
- -Light scattering by three different beams from the same point/p45 (28コマ目)
- -Calculation of the resonance frequency at and around the scatterers/p50 (31コマ目)
- V.Temperature dependence of resonance frequencies and scattered intensities./p56 (34コマ目)
- -Formulation/p57 (35コマ目)
- -Measurements/p58 (36コマ目)
- -Determination of the resonance frequencies of the scatterers./p60 (37コマ目)
- VI.Two beam method/p68 (41コマ目)
- -Concept of the two beam method to observe of the electron levels of scatterers/p69 (42コマ目)
- -Apparatus of the two beam method/p72 (44コマ目)
- -Scattered intensity against the power and wavelength of bias light/p76 (46コマ目)
- -Distribution of electron levels around the scatterers/p83 (49コマ目)
- -Measurement of the light scattered from the EL2 centers/p86 (51コマ目)
- VII.Conclusion/p101 (58コマ目)
- Acknowledgment/p104 (60コマ目)
- References/p106 (62コマ目)