Growth mechanism and properties of aluminum nitride prepared by chemical vapor deposition CVD法による窒素アルミニウムの合成機構と物性
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著者
書誌事項
- タイトル
-
Growth mechanism and properties of aluminum nitride prepared by chemical vapor deposition
- タイトル別名
-
CVD法による窒素アルミニウムの合成機構と物性
- 著者名
-
金, 煕濬
- 著者別名
-
キム, ヒィジュン
- 学位授与大学
-
東京大学
- 取得学位
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博士 (工学)
- 学位授与番号
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甲第9704号
- 学位授与年月日
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1992-09-24
注記・抄録
博士論文
目次
- CONTENTS / p1 (0003.jp2)
- CHAPTER1 Introduction and Historical Background / p1 (0010.jp2)
- Introduction / p1 (0010.jp2)
- Historical Background / p4 (0013.jp2)
- 1-1.Formation of AlN Film / p4 (0013.jp2)
- 1-2.Formation of AlN powder / p13 (0022.jp2)
- CHAPTER2 Experimental method / p34 (0043.jp2)
- CHAPTER3 Properties of the aluminum nitride prepared by AlCl3/NH3 system. / p46 (0055.jp2)
- 3-1.Adduct / p46 (0055.jp2)
- 3-2.AlN film / p48 (0057.jp2)
- CHAPTER4 Molecular size and its temperature dependence of the growth species in chemical vapor deposition of aluminum nitride / p69 (0078.jp2)
- Summary / p69 (0078.jp2)
- 4-1.Introduction / p70 (0079.jp2)
- 4-2.Experiments / p71 (0080.jp2)
- 4-3.Experimental Results and Analyses / p73 (0082.jp2)
- 4-4.Formulation of growth rate in the linear growth processes governed by different rate-controlling steps / p74 (0083.jp2)
- 4-5.Determination of molecular size of a growth species from its molecular diffusion coefficient / p78 (0087.jp2)
- 4-6.Conclusion / p81 (0090.jp2)
- CHAPTER5 Determination of surface reactivity of the film growth species by using microtrench method in an APCVD process / p96 (0105.jp2)
- Summary / p96 (0105.jp2)
- 5-A.Determination of surface reaction rate constant by using micro-trench method in APCVD / p98 (0107.jp2)
- 5-B.Temperature dependence of the sticking probability of the film growth species in an APCVD / p105 (0114.jp2)
- CHAPTER6 Control of crystallographic orientation of AlN film and method to prepare high purity and nonorientated nanostructure AlN film / p121 (0130.jp2)
- Summary / p121 (0130.jp2)
- 6-A.Control of crystallographic orientation of AlN films / p123 (0132.jp2)
- 6-B.Method to prepare high purity and nonorientated nanostructure AlN film / p132 (0141.jp2)
- CHAPTER7 Mechanism of particle formation and growth and dimensionless number governing film-to-particle transition / p160 (0169.jp2)
- 7-1.Introduction / p160 (0169.jp2)
- 7-2.Experimental apparatus and procedures / p162 (0171.jp2)
- 7-3.Experimental results / p164 (0173.jp2)
- 7-4.Theory / p167 (0176.jp2)
- 7-5.Discussion / p175 (0184.jp2)
- 7-6.Conclusion / p179 (0188.jp2)
- CHAPTER8 Molecular size and its temperature dependence of growth species in the presence of particles in the gas phase / p197 (0206.jp2)
- Summary / p197 (0206.jp2)
- 8-1.Introduction / p198 (0207.jp2)
- 8-2.Experiments / p199 (0208.jp2)
- 8-3.Analytical procedures / p201 (0210.jp2)
- 8-4.Discussion / p207 (0216.jp2)
- 8-5.Results and Discussion / p212 (0221.jp2)
- 8-6.Conclusion / p213 (0222.jp2)
- CHAPTER9 Conclusions / p226 (0235.jp2)
- Acknowledgements / p232 (0241.jp2)
- Vita / p234 (0243.jp2)
- List of Publications / p235 (0244.jp2)
- 要旨 / p238 (0247.jp2)