Investigation on thin-film polycrystalline silicon for solar cells by a new solid phase crystallization method 新しい固相成長法による太陽電池用薄膜多結晶シリコンに関する研究

博士論文

1 Introduction / p1 　1.1 History of solar cells / p1 　1.2 Conventional fabrication method of thin-film polycrystalline silicon for solar cells / p2 　1.3 Solid phase crystallization method / p6 　1.4 A new solid phase crystallization (SPC) method / p8 　References / p12 2 Theoretical background / p14 　2.1 Introduction / p14 　2.2 Solid phase crystallization / p15 　2.3 Transport of polycrystalline silicon films / p18 　2.4 Current-voltage characteristics of p-n junction / p21 　2.5 Summary / p26 　References / p27 3 Development of thin-film polycrystalline silicon by a new SPC method / p28 　3.1 Introduction / p28 　3.2 Effect of impurities (dopants) / p33 　3.3 Optimum starting materials for the SPC method / p66 　3.4 Investigation of substrates / p83 　3.5 Solid phase crystallization using crystal silicon as a seed / p97 　3.6 Summary / p108 　References / p110 4 Development of solar cells using thin-film polycrystalline silicon / p111 　4.1 Introduction / p111 　4.2 Experimental technique / p112 　4.3 A new junction fabrication technology / p116 　4.4 Solar cells using thin-film polycrystalline silicon fabricated by the SPC method / p136 　4.5 Summary / p147 　References / p149 5.Summary / p150 Acknowledgement / p153