Mesoscopic structures and quantum optical properties of InAs/GaAs and Al[x]Ga[1-x]P/Al[y]Ga[1-y]P semiconductors InAs/GaAsおよびAl[x]Ga[1-x]P/Al[y]Ga[1-y]P半導体におけるメソスコピック構造と光量子物性

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著者

    • 鍋谷, 暢一 ナベタニ, ヨウイチ

書誌事項

タイトル

Mesoscopic structures and quantum optical properties of InAs/GaAs and Al[x]Ga[1-x]P/Al[y]Ga[1-y]P semiconductors

タイトル別名

InAs/GaAsおよびAl[x]Ga[1-x]P/Al[y]Ga[1-y]P半導体におけるメソスコピック構造と光量子物性

著者名

鍋谷, 暢一

著者別名

ナベタニ, ヨウイチ

学位授与大学

京都大学

取得学位

博士 (工学)

学位授与番号

甲第6445号

学位授与年月日

1996-03-23

注記・抄録

博士論文

目次

  1. 論文目録 / (0001.jp2)
  2. Acknowledgments / p1 (0005.jp2)
  3. Contents / p3 (0006.jp2)
  4. 1 Introduction / p1 (0008.jp2)
  5. References / p6 (0011.jp2)
  6. 2 Growth of InAs on GaAs and epitaxial layer structure / p11 (0013.jp2)
  7. 2.1 Introduction / p11 (0013.jp2)
  8. 2.2 Growth procedure and experimental setup / p12 (0014.jp2)
  9. 2.3 Reflection high energy electron diffraction observation / p16 (0016.jp2)
  10. 2.4 Atomic force microscope observation / p20 (0018.jp2)
  11. 2.5 Transmission electron microscope observation / p25 (0020.jp2)
  12. 2.6 Discussion / p37 (0026.jp2)
  13. 2.7 Summary / p38 (0027.jp2)
  14. References / p40 (0028.jp2)
  15. 3 Theoretical approach of island formation and strain distribution in island / p43 (0029.jp2)
  16. 3.1 Introduction / p43 (0029.jp2)
  17. 3.2 Calculation process / p44 (0030.jp2)
  18. 3.3 Results and discussion / p52 (0034.jp2)
  19. 3.4 Summary / p63 (0039.jp2)
  20. References / p64 (0040.jp2)
  21. 4 Optical property of InAs grown on GaAs / p65 (0040.jp2)
  22. 4.1 Introduction / p65 (0040.jp2)
  23. 4.2 Experimental setup / p66 (0041.jp2)
  24. 4.3 Photoluminescence spectroscopy / p67 (0041.jp2)
  25. 4.4 Photoluminescence polarization spectroscopy / p71 (0043.jp2)
  26. 4.5 Electroluminescence spectroscopy / p77 (0046.jp2)
  27. 4.6 Photocurrent spectroscopy / p81 (0048.jp2)
  28. 4.7 Discussion / p82 (0049.jp2)
  29. 4.8 Summary / p85 (0050.jp2)
  30. References / p86 (0051.jp2)
  31. 5 Dislocation suppression in InAs grown on GaAs by using misoriented substrates / p89 (0052.jp2)
  32. 5.1 Introduction / p89 (0052.jp2)
  33. 5.2 Experimental setup / p90 (0053.jp2)
  34. 5.3 Experimental results and discussion / p91 (0053.jp2)
  35. 5.4 Calculation of strain energy and discussion / p96 (0056.jp2)
  36. 5.5 Summary / p107 (0061.jp2)
  37. References / p109 (0062.jp2)
  38. 6 Growth of AlP/GaP ordered and disordered superlattices and their optical properties / p111 (0063.jp2)
  39. 6.1 Introduction / p111 (0063.jp2)
  40. 6.2 Growth procedure and experimental setup / p113 (0064.jp2)
  41. 6.3 Experimental results and discussion / p116 (0066.jp2)
  42. 6.4 Summary / p124 (0070.jp2)
  43. References / p125 (0070.jp2)
  44. 7 Growth of AlGaP/AlGaP ordered and disordered superlattices and their optical properties / p129 (0072.jp2)
  45. 7.1 Introduction / p129 (0072.jp2)
  46. 7.2 Growth and structural characterization / p130 (0073.jp2)
  47. 7.3 Photoluminescence spectroscopy and discussion / p135 (0075.jp2)
  48. 7.4 Summary / p147 (0081.jp2)
  49. References / p149 (0082.jp2)
  50. 8 Conclusion / p151 (0083.jp2)
  51. List of publications / p155 (0085.jp2)
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各種コード

  • NII論文ID(NAID)
    500000131169
  • NII著者ID(NRID)
    • 8000000965860
  • DOI(NDL)
  • NDL書誌ID
    • 000000295483
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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