Control of electrical properties of 4H-SiC grown by vapor phase epitaxy for power electronic application 気相成長4H-SiCの電気的性質の制御とパワーエレクトロニクスへの応用

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著者

    • 伊藤, 明 イトウ, アキラ

書誌事項

タイトル

Control of electrical properties of 4H-SiC grown by vapor phase epitaxy for power electronic application

タイトル別名

気相成長4H-SiCの電気的性質の制御とパワーエレクトロニクスへの応用

著者名

伊藤, 明

著者別名

イトウ, アキラ

学位授与大学

京都大学

取得学位

博士 (工学)

学位授与番号

甲第6447号

学位授与年月日

1996-03-23

注記・抄録

博士論文

目次

  1. 論文目録 / (0001.jp2)
  2. Contents / p5 (0009.jp2)
  3. Abstract / p1 (0007.jp2)
  4. Acknowledgments / p3 (0008.jp2)
  5. Contents / p5 (0009.jp2)
  6. 1.Introduction / p1 (0011.jp2)
  7. 1.1 Background / p1 (0011.jp2)
  8. 1.2 Silicon carbide / p3 (0012.jp2)
  9. 1.3 Why 4H-SiC? / p9 (0015.jp2)
  10. 1.4 Outline of thesis / p12 (0017.jp2)
  11. 2.Bulk Crystal Growth of 4H-SiC by Sublimation Method / p19 (0020.jp2)
  12. 2.1 Introduction / p19 (0020.jp2)
  13. 2.2 Sublimation growth system / p22 (0022.jp2)
  14. 2.3 Bulk crystal growth / p23 (0022.jp2)
  15. 2.4 Polytype identification and crystallinity / p30 (0026.jp2)
  16. 2.5 Characterization of 4H-SiC bulk crystals / p33 (0027.jp2)
  17. 2.6 Summary / p51 (0036.jp2)
  18. 3.Homoepitaxial CVD Growth of 4H-SiC:Step-Controlled Epitaxy / p57 (0039.jp2)
  19. 3.1 Introduction / p57 (0039.jp2)
  20. 3.2 CVD apparatus and growth procedure / p58 (0040.jp2)
  21. 3.3 Homoepitaxial CVD growth of undoped 4H-SiC / p62 (0042.jp2)
  22. 3.4 Control of impurity doping during homoepitaxial CVD growth / p74 (0048.jp2)
  23. 3.5 Impurity-incorporation mechanism in step-controlled epitaxy / p81 (0051.jp2)
  24. 3.6 Summary / p90 (0056.jp2)
  25. 4.Characterization of 4H-SiC Homoepitaxial Layers by Photoluminescence / p97 (0059.jp2)
  26. 4.1 Introduction / p97 (0059.jp2)
  27. 4.2 Photoluminescence of undoped 4H-SiC homoepitaxial layers / p98 (0060.jp2)
  28. 4.3 Temperature dependence of exciton band-gap / p104 (0063.jp2)
  29. 4.4 Photoluminescence due to free excitons / p104 (0063.jp2)
  30. 4.5 Quenching properties / p106 (0064.jp2)
  31. 4.6 Summary / p118 (0070.jp2)
  32. 5.Electrical Properties of 4H-SiC Grown by Step-Controlled Epitaxy / p121 (0071.jp2)
  33. 5.1 Introduction / p121 (0071.jp2)
  34. 5.2 Hall effects and identification of impurity levels / p122 (0072.jp2)
  35. 5.3 Breakdown field / p140 (0081.jp2)
  36. 5.4 Electron drift velocity / p143 (0082.jp2)
  37. 5.5 Schottky barrier heights of metal/4H-SiC structures / p154 (0088.jp2)
  38. 5.6 Discussion / p171 (0096.jp2)
  39. 5.7 Summary / p172 (0097.jp2)
  40. 6 Application to Power Devices:High-Voltage 4H-SiC Schottky Rectifiers / p179 (0100.jp2)
  41. 6.1 Introduction / p179 (0100.jp2)
  42. 6.2 Figure of merit for power devices / p181 (0101.jp2)
  43. 6.3 Feasibility of 4H-SiC Schottky rectifiers:theoretical prediction / p183 (0102.jp2)
  44. 6.4 Device performance / p193 (0107.jp2)
  45. 6.5 Advanced structure:edge termination / p207 (0114.jp2)
  46. 6.6 Summary / p217 (0119.jp2)
  47. 7.Conclusion / p223 (0122.jp2)
  48. 7.1 Conclusion / p223 (0122.jp2)
  49. 7.2 For future work / p226 (0124.jp2)
  50. Appendix / p231 (0126.jp2)
  51. A.1 Donor-acceptor pair emission / p231 (0126.jp2)
  52. A.2 Site effects / p233 (0127.jp2)
  53. B.1 Minimum yield:χmin / p235 (0128.jp2)
  54. C.1 Differential evaluation of electron concentration / p237 (0129.jp2)
  55. D.1 Interfacial layer model / p239 (0130.jp2)
  56. List of Publications / p243 (0132.jp2)
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各種コード

  • NII論文ID(NAID)
    500000131171
  • NII著者ID(NRID)
    • 8000000965862
  • DOI(NDL)
  • NDL書誌ID
    • 000000295485
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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