Molecular beam epitaxial growth of Ge on GaAs and application to collector-up heterojunction bipolar transistors 砒化ガリウム上ゲルマニウムの分子線エピタキシャル成長及びコレクタアップ型ヘテロバイポーラトランジスタへの応用

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著者

    • 川中, 雅史 カワナカ, マサフミ

書誌事項

タイトル

Molecular beam epitaxial growth of Ge on GaAs and application to collector-up heterojunction bipolar transistors

タイトル別名

砒化ガリウム上ゲルマニウムの分子線エピタキシャル成長及びコレクタアップ型ヘテロバイポーラトランジスタへの応用

著者名

川中, 雅史

著者別名

カワナカ, マサフミ

学位授与大学

京都大学

取得学位

博士 (工学)

学位授与番号

乙第9186号

学位授与年月日

1996-03-23

注記・抄録

博士論文

目次

  1. 論文目録 / (0001.jp2)
  2. CONTENTS / p7 (0006.jp2)
  3. Abstract / p3 (0004.jp2)
  4. Acknowledgments / p4 (0005.jp2)
  5. I.INTRODUCTION / p1 (0008.jp2)
  6. 1-1 Background / p1 (0008.jp2)
  7. 1-2 Ge/GaAs Heterojunction Bipolar Transistors(HBTs) / p2 (0009.jp2)
  8. 1-3 0rganization / p4 (0010.jp2)
  9. References / p5 (0010.jp2)
  10. II.MOLECULAR BEAM EPITAXIAL GROWTH OF Ge ON(1OO)GaAs / p7 (0011.jp2)
  11. 2-1 Introduction / p7 (0011.jp2)
  12. 2-2 Experimental Instruments and Procedures / p7 (0011.jp2)
  13. 2-3 Undoped Ge/GaAs Growth by Electron-Bombardment Gun / p9 (0012.jp2)
  14. 2-4 Undoped Ge/GaAs Growth by Knudsen Cell / p12 (0014.jp2)
  15. 2-5 Discussion / p13 (0014.jp2)
  16. 2-6 Summary / p14 (0015.jp2)
  17. References / p15 (0015.jp2)
  18. III.DOPING CHARACTERISTICS OF Ge / p17 (0016.jp2)
  19. 3-1 Introduction / p17 (0016.jp2)
  20. 3-2 Experimental Procedures / p19 (0017.jp2)
  21. 3-3 P-Type Doping Characteristics of Ge / p19 (0017.jp2)
  22. 3-4 N-Type(GeAs)Doping Characteristics of Ge / p21 (0018.jp2)
  23. 3-5 Discussion / p26 (0021.jp2)
  24. 3-6 Summary / p27 (0021.jp2)
  25. References / p28 (0022.jp2)
  26. IV.ELECTRICAL PROPERTIES OF N-Ge/P-Ge HOMOJUNCTION DIODES AND P-Ge/N-GaAs HETEROJUNCTION DIODES / p29 (0022.jp2)
  27. 4-1 Introduction / p29 (0022.jp2)
  28. 4-2 Experimental Procedures / p29 (0022.jp2)
  29. 4-3 Current-Voltage Characteristics of n-Ge/p-Ge Homojunction Diodes / p31 (0023.jp2)
  30. 4-4 Current-Voltage Characteristics of p-Ge/n-GaAs Heterojunction Diodes / p35 (0025.jp2)
  31. 4-5 Evaluation of Conduction Band Offset at Ge/GaAs Heterointerface / p39 (0027.jp2)
  32. 4-6 Discussion / p41 (0028.jp2)
  33. 4-7 Summary / p42 (0029.jp2)
  34. References / p42 (0029.jp2)
  35. V.FABRICATION AND ELECTRICAL CHARACTERISTICS OF COLLECTOR-UP N-Ge/P-Ge/N-GaAs HETEROJUNCTION BIPOLAR TRANSISTORS / p43 (0029.jp2)
  36. 5-1 Introduction / p43 (0029.jp2)
  37. 5-2 Device Fabrication / p43 (0029.jp2)
  38. 5-3 Electrical Characteristics of HBTs with Ge Grown by Electron-Bombardment Gun / p47 (0031.jp2)
  39. 5-4 Electrical Characteristics of HBTs with Ge Grown by Knudsen Cell / p48 (0032.jp2)
  40. 5-5 Discussion / p52 (0034.jp2)
  41. 5-6 Summary / p53 (0034.jp2)
  42. References / p53 (0034.jp2)
  43. VI.Ge/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS WITH Ga-DIFFUSION SUPPRESSION AT Ge/GaAs HETEROJUNCTION / p55 (0035.jp2)
  44. 6-1 Introduction / p55 (0035.jp2)
  45. 6-2 Device Fabrication / p56 (0036.jp2)
  46. 6-3 Ga-Diffusion Suppression at p-Ge/n-GaAs Heterojunction / p57 (0036.jp2)
  47. 6-4 Ge/GaAs HBTs with Ga-Diffusion Suppression / p59 (0037.jp2)
  48. 6-5 Discussion / p63 (0039.jp2)
  49. 6-6 Summary / p64 (0040.jp2)
  50. References / p65 (0040.jp2)
  51. VII.Ge/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS WITH BAND OFFSET CONTROL AT Ge/GaAs HETEROJUNCTION / p67 (0041.jp2)
  52. 7-1 Introduction / p67 (0041.jp2)
  53. 7-2 Device Fabrication / p69 (0042.jp2)
  54. 7-3 Band Offset Control at Ge/GaAs Heterojunction / p71 (0043.jp2)
  55. 7-4 Ge/GaAs HBTs with Band Offset Control / p75 (0045.jp2)
  56. 7-5 Discussion / p79 (0047.jp2)
  57. 7-6 Summary / p80 (0048.jp2)
  58. References / p81 (0048.jp2)
  59. VIII.DC AND HIGH FREQUENCY CHARACTERISTICS OF SMALL-SIZED COLLECTOR-UP Ge/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS / p83 (0049.jp2)
  60. 8-1 Introduction / p83 (0049.jp2)
  61. 8-2 Device Structure and Fabrication / p84 (0050.jp2)
  62. 8-3 DC Characteristics of Small-Sized Ge/GaAs HBTs / p89 (0052.jp2)
  63. 8-4 High Frequency Characteristics of Small-Sized Ge/GaAs HBTs / p94 (0055.jp2)
  64. 8-5 Discussion / p102 (0059.jp2)
  65. 8-6 Summary / p103 (0059.jp2)
  66. References / p104 (0060.jp2)
  67. IX.FUTURE TRENDS FOR Ge/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS AND APPLICATION OF Ge/GaAs HETERO-SYSTEM / p107 (0061.jp2)
  68. 9-1 Introduction / p107 (0061.jp2)
  69. 9-2 Evaluation of Ge/GaAs HBT Performance / p107 (0061.jp2)
  70. 9-3 Other Device Applications of Ge/GaAs Hetero-System / p110 (0063.jp2)
  71. 9-4 Summary / p111 (0063.jp2)
  72. References / p112 (0064.jp2)
  73. X.CONCLUSIONS / p115 (0065.jp2)
  74. ADDENDUM / p119 (0067.jp2)
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各種コード

  • NII論文ID(NAID)
    500000131268
  • NII著者ID(NRID)
    • 8000000965953
  • DOI(NDL)
  • NDL書誌ID
    • 000000295582
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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