Metalorganic vapor phase epitaxy of phosphorous quaternary alloy semiconductors and application to visible lasers リン系四元混晶半導体の有機金属気相エピタキシャル成長と可視光半導体レーザへの応用
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著者
書誌事項
- タイトル
-
Metalorganic vapor phase epitaxy of phosphorous quaternary alloy semiconductors and application to visible lasers
- タイトル別名
-
リン系四元混晶半導体の有機金属気相エピタキシャル成長と可視光半導体レーザへの応用
- 著者名
-
近藤, 真人
- 著者別名
-
コンドウ, マコト
- 学位授与大学
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京都大学
- 取得学位
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博士 (工学)
- 学位授与番号
-
乙第9209号
- 学位授与年月日
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1996-03-23
注記・抄録
博士論文
目次
- 論文目録 / (0001.jp2)
- CONTENTS / p1 (0006.jp2)
- I.INTRODUCTION / p1 (0008.jp2)
- References / p7 (0011.jp2)
- II.HIGHLY UNIFORM MOVPE GROWTH USING STAGNATION POINT FLOW / p10 (0013.jp2)
- 2-1.Introduction / p10 (0013.jp2)
- 2-2.Stagnation Point Flow Reactor / p11 (0013.jp2)
- 2-3.GaInAsP Alloy System / p17 (0016.jp2)
- 2-4.AlGaInP Alloy System / p24 (0020.jp2)
- 2-5.Influence of Growth Parameters Variation / p28 (0022.jp2)
- 2-6.Discussion / p37 (0026.jp2)
- 2-7.Summary / p42 (0029.jp2)
- References / p43 (0029.jp2)
- III.GROWTH AND CHARACTERIZATION OF GaInAsP/InP QUANTUM WELL STRUCTURES / p46 (0031.jp2)
- 3-1.Introduction / p46 (0031.jp2)
- 3-2.Experimental Procedure / p47 (0031.jp2)
- 3-3.Single Quantum Well Structures / p50 (0033.jp2)
- 3-4.Multiple Quantum Well Structures / p54 (0035.jp2)
- 3-5.Discussion / p62 (0039.jp2)
- 3-6.Summary / p71 (0043.jp2)
- References / p71 (0043.jp2)
- IV.GROWTH AND CHARACTERIZATION OF GaInP/AlGaInP STRAINED QUANTUM WELL STRUCTURES / p74 (0045.jp2)
- 4-1.Introduction / p74 (0045.jp2)
- 4-2.Experimental Procedure / p75 (0045.jp2)
- 4-3.Optical Properties of Strained Quantum Wells / p78 (0047.jp2)
- 4-4.Discussion / p90 (0053.jp2)
- 4-5.Summary / p96 (0056.jp2)
- References / p96 (0056.jp2)
- V.ORIENTATION DEPENDENCE OF IMPURITY INCORPORATION / p99 (0057.jp2)
- 5-1.Introduction / p99 (0057.jp2)
- 5-2.Experimental Procedure / p101 (0058.jp2)
- 5-3.Orientation Dependence of Growth Rate / p103 (0059.jp2)
- 5-4.Fundamental Doping Characteristics / p104 (0060.jp2)
- 5-5.Orientation Dependence of Doping Efficiency / p107 (0061.jp2)
- 5-6.Discussion / p118 (0067.jp2)
- 5-7.Summary / p138 (0077.jp2)
- References / p139 (0077.jp2)
- VI.MAGNESIUM DOPING TRANSIENT / p144 (0080.jp2)
- 6-1.Introduction / p144 (0080.jp2)
- 6-2.Experimental Procedure / p146 (0081.jp2)
- 6-3.Mg-Doping Characteristics / p146 (0081.jp2)
- 6-4.Correlation between Mg-Doping Delay and Al Composition / p148 (0082.jp2)
- 6-5.Discussion / p151 (0083.jp2)
- 6-6.Summary / p164 (0090.jp2)
- References / p164 (0090.jp2)
- VII.OXYGEN IMPURITY AND DEEP LEVELS IN AlGaInP / p167 (0091.jp2)
- 7-1.Introduction / p167 (0091.jp2)
- 7-2.Experimental Procedure / p170 (0093.jp2)
- 7-3.Oxygen Doping Behavior / p177 (0096.jp2)
- 7-4.Correlation between Oxygen and Deep Levels / p178 (0097.jp2)
- 7-5.Growth Parameter Dependence of Oxygen and Deep Level Concentrations / p179 (0097.jp2)
- 7-6.Discussion / p182 (0099.jp2)
- 7-7.Summary / p184 (0100.jp2)
- References / p184 (0100.jp2)
- VIII.LATERAL PN PATTERNING BY SIMULTANEOUS AND ALTERNATE IMPURITY DOPING / p189 (0102.jp2)
- 8-1.Introduction / p189 (0102.jp2)
- 8-2.Experimental Procedure / p190 (0103.jp2)
- 8-3.Lateral pn Patterning / p191 (0103.jp2)
- 8-4.Discussion / p198 (0107.jp2)
- 8-5.Summary / p201 (0108.jp2)
- References / p201 (0108.jp2)
- IX.FABRICATION OF AlGaInP VISIBLE SEMICONDUCTOR LASERS / p203 (0109.jp2)
- 9-1.Introduction / p203 (0109.jp2)
- 9-2.AlGaInP Self-Aligned Stepped-Substrate(S³)Visible Lasers / p204 (0110.jp2)
- 9-3.Discussion / p214 (0115.jp2)
- 9-4.Summary / p223 (0119.jp2)
- References / p224 (0120.jp2)
- X.CONCLUSIONS / p226 (0121.jp2)
- ACKNOWLEDGMENTS / p232 (0124.jp2)
- LIST OF PUBLICATIONS / p234 (0125.jp2)
