Fabrication processes and characterizations of non-planar semiconductor lasers with GaAs and related materials GaAs系材料を用いた非平坦な半導体レーザの作製法と評価に関する研究

Access this Article

Search this Article

Author

    • 高森, 毅 タカモリ, タケシ

Bibliographic Information

Title

Fabrication processes and characterizations of non-planar semiconductor lasers with GaAs and related materials

Other Title

GaAs系材料を用いた非平坦な半導体レーザの作製法と評価に関する研究

Author

高森, 毅

Author(Another name)

タカモリ, タケシ

University

京都大学

Types of degree

博士 (工学)

Grant ID

乙第9210号

Degree year

1996-03-23

Note and Description

博士論文

Table of Contents

  1. 論文目録 / (0001.jp2)
  2. ABSTRACT / p1 (0005.jp2)
  3. TABLE OF CONTENTS / (0006.jp2)
  4. I. INTRODUCTION / p1 (0008.jp2)
  5. 1-1. Background / p1 (0008.jp2)
  6. 1-2. Aims and Outline of This Study / p7 (0011.jp2)
  7. References / p11 (0013.jp2)
  8. II. MOLECULAR BEAM EPITAXIAL PROCESSES OF GaAs AND AlGaAs ON FLAT SUBSTRATES / p17 (0016.jp2)
  9. 2-1. Introduction / p17 (0016.jp2)
  10. 2-2. GaAs/AlGaAs Single Quantum Wells Grown on Variously Oriented GaAs Substrates / p19 (0017.jp2)
  11. 2-3. Electrical and Optical Properties of Si-doped GaAs on (311)Oriented Substrates / p27 (0021.jp2)
  12. 2-4. Si-doped [化学式] on (511)Oriented GaAs Substrates / p35 (0025.jp2)
  13. 2-5. Semi-insulating Property of Low-temperature Grown GaAs by MBE / p42 (0029.jp2)
  14. 2-6. Discussion / p46 (0031.jp2)
  15. 2-7. Summary / p51 (0033.jp2)
  16. References / p52 (0034.jp2)
  17. III. FABRICATION PROCESSES FOR NON-PLANAR SEMICONDUCTOR LASERS / p56 (0036.jp2)
  18. 3-1. Introduction / p56 (0036.jp2)
  19. 3-2. Lateral Junctions of Molecular Beam Epitaxial Grown Si-doped GaAs and AlGaAs on Patterned Substrates / p58 (0037.jp2)
  20. 3-3. Dry Etching Technology for Non-Planar Structures / p68 (0042.jp2)
  21. 3-4. Discussion / p76 (0046.jp2)
  22. 3-5. Summary / p80 (0048.jp2)
  23. References / p81 (0048.jp2)
  24. IV. LOW-THRESHOLD INDEX-GUIDED STRAINED InGaAs/AlGaAs QUANTUM WELL LASERS GROWN ON CHANNELED STRIPES / p84 (0050.jp2)
  25. 4-1. Introduction / p84 (0050.jp2)
  26. 4-2. Device Structure and Fabrication / p86 (0051.jp2)
  27. 4-3. 2×2 Matrix Approach for Calculation of Waveguide Modes / p91 (0053.jp2)
  28. 4-4. Properties of Current-Confinement Structure / p96 (0056.jp2)
  29. 4-5. Device Performances / p99 (0057.jp2)
  30. 4-6. Discussion / p106 (0061.jp2)
  31. 4-7. Summary / p107 (0061.jp2)
  32. References / p108 (0062.jp2)
  33. V. FOLDED-CAVITY SURFACE-EMITTING LASERS / p110 (0063.jp2)
  34. 5-1. Introduction / p110 (0063.jp2)
  35. 5-2. Device Structure / p111 (0063.jp2)
  36. 5-3. Fabrication Process / p113 (0064.jp2)
  37. 5-4. Device Performances / p116 (0066.jp2)
  38. 5-5. Discussion / p120 (0068.jp2)
  39. 5-6. Summary / p123 (0069.jp2)
  40. References / p124 (0070.jp2)
  41. VI. CONCLUSIONS / p126 (0071.jp2)
  42. ACKNOWLEDGMENTS / p131 (0073.jp2)
  43. PUBLICATIONS / p133 (0074.jp2)
  44. APPENDIX A PROGRAM LIST FOR EFFECTIVE INDEX AND OPTICAL MODE IN MULTI-LAYER WAVEGUIDES / p137 (0076.jp2)
  45. APPENDIX B LIST OF ABBREVIATIONS / p146 (0081.jp2)
4access

Codes

  • NII Article ID (NAID)
    500000131292
  • NII Author ID (NRID)
    • 8000000965977
  • DOI(NDL)
  • NDLBibID
    • 000000295606
  • Source
    • NDL ONLINE
    • NDL Digital Collections

Export

Page Top