Studies on gas phase kinetics of the SiHx radicals in an RF SiH[4] plasma 高周波放電シランプラズマ中のSiHxラジカルの気相反応過程に関する研究

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著者

    • 野村, 秀次 ノムラ, ヒデシ

書誌事項

タイトル

Studies on gas phase kinetics of the SiHx radicals in an RF SiH[4] plasma

タイトル別名

高周波放電シランプラズマ中のSiHxラジカルの気相反応過程に関する研究

著者名

野村, 秀次

著者別名

ノムラ, ヒデシ

学位授与大学

名古屋大学

取得学位

博士 (工学)

学位授与番号

甲第3395号

学位授与年月日

1996-03-25

注記・抄録

博士論文

目次

  1. Contents / p1 (0003.jp2)
  2. 1 Introduction / p1 (0005.jp2)
  3. 1.1 Hydrogenated Amorphous Silicon Thin Film / p1 (0005.jp2)
  4. 1.2 RF SiII₄ Plasma for a-Si:H Film Formation / p2 (0006.jp2)
  5. 1.3 Purpose and Composition of This Thesis / p7 (0011.jp2)
  6. References for Chapter1 / p9 (0013.jp2)
  7. 2 Principles of the Neutral Radical Detection and the Electron Density Measurement / p11 (0015.jp2)
  8. 2.1 Infrared Diode Laser Absorption Spectroscopy(IRLAS)for the SiH₃ Radical Density Measurement / p11 (0015.jp2)
  9. 2.2 Laser-Induced Fluorescence(LIF)Technique for the SiH and SiH₂ Radical Detection / p20 (0024.jp2)
  10. 2.3 Microwave Cavity Resonance Technique for the Electron Density Measurement / p23 (0027.jp2)
  11. References for Chapter2 / p29 (0033.jp2)
  12. 3 Effect of Dilution Gases on the SiH₃ Radical Density / p31 (0035.jp2)
  13. 3.1 Introduction / p31 (0035.jp2)
  14. 3.2 SiH₃ Radical Density in an RF SiH₄ Plasma with Dilution Gases / p32 (0036.jp2)
  15. 3.3 Production and Loss Process of SiH₃ / p34 (0038.jp2)
  16. 3.4 Summary / p44 (0048.jp2)
  17. References tor Chapter3 / p46 (0050.jp2)
  18. 4 Effect of Dilution Gases on the Electron Density and Temperature / p47 (0051.jp2)
  19. 4.1 Introduction / p47 (0051.jp2)
  20. 4.2 Electron Density and Temperature in an RF SiH₄ Plasma with Dilution Gases / p48 (0052.jp2)
  21. 4.3 Electron Loss Process in the Afterglow and in the Active Plasma / p58 (0062.jp2)
  22. 4.4 Summary / p64 (0068.jp2)
  23. References for Chapter4 / p66 (0070.jp2)
  24. 5 Reaction Loss Process of the SiH and SiH₂ Radicals / p67 (0071.jp2)
  25. 5.1 Introduction / p67 (0071.jp2)
  26. 5.2 Rate Constant for the Reaction of SiH₂ with SiH₄ / p69 (0073.jp2)
  27. 5.3 Rate Constant for the Reaction of SiH with SiH₄ / p76 (0080.jp2)
  28. 5.4 Summary / p80 (0084.jp2)
  29. References for Chapter5 / p81 (0085.jp2)
  30. 6 Primary Dissociation Channels for SiH₄ in an RF SiH₄ Plasma / p83 (0087.jp2)
  31. 6.1 Introduction / p83 (0087.jp2)
  32. 6.2 [化学式] production frequency in an RF SiH₄ plasmas / p84 (0088.jp2)
  33. 6.3 Summary / p85 (0089.jp2)
  34. References for Chapter6 / p88 (0092.jp2)
  35. 7 Conclusion / p89 (0093.jp2)
  36. 7.1 Summary of This Thesis / p89 (0093.jp2)
  37. 7.2 Scope for Future Work / p91 (0095.jp2)
  38. References for Chapter7 / p93 (0097.jp2)
  39. Acknowledgments / p94 (0098.jp2)
  40. List of Papers Concerned with This Thesis / p96 (0100.jp2)
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各種コード

  • NII論文ID(NAID)
    500000131773
  • NII著者ID(NRID)
    • 8000000966419
  • DOI(NDL)
  • NDL書誌ID
    • 000000296087
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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