HVPE growth of GaN bulk single crystal HVPE法によるGaNバルク単結晶の成長に関する研究

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Author

    • Theeradetch Detchprohm ティーラデート デートプロム

Bibliographic Information

Title

HVPE growth of GaN bulk single crystal

Other Title

HVPE法によるGaNバルク単結晶の成長に関する研究

Author

Theeradetch Detchprohm

Author(Another name)

ティーラデート デートプロム

University

名古屋大学

Types of degree

博士 (工学)

Grant ID

甲第3404号

Degree year

1996-03-25

Note and Description

博士論文

Table of Contents

  1. CONTENTS / p1 (0003.jp2)
  2. Chapter 1 Introduction / p1 (0004.jp2)
  3. §1.1 The Overview of Wide-gap Semiconductor / p1 (0004.jp2)
  4. §1.2 Historical View of GaN and Related Materials / p13 (0010.jp2)
  5. §1.3 The Purposes and Scope of This Study / p21 (0014.jp2)
  6. References / p23 (0015.jp2)
  7. Chapter 2 HVPE Growth of Thick and Strain-Free GaN Bulk Single Crystal Films / p33 (0020.jp2)
  8. §2.1 Introduction / p33 (0020.jp2)
  9. §2.2 Experimental Procedure / p34 (0021.jp2)
  10. §2.3 Characterization of Thick GaN Single Crystals / p39 (0023.jp2)
  11. §2.4 Numerical Analysis of Thermal Strain Relaxation Mechanism / p53 (0030.jp2)
  12. §2.5 Conclusion / p69 (0038.jp2)
  13. References / p70 (0039.jp2)
  14. Chapter 3 Introduction of ZnO Buffer Layer to HVPE Growth of GaN / p72 (0040.jp2)
  15. §3.1 Introduction / p72 (0040.jp2)
  16. §3.2 Experimental Procedure / p74 (0041.jp2)
  17. §3.3 Morphology of GaN Bulk Single Crystal Using ZnO Buffer Layer / p78 (0043.jp2)
  18. §3.4 Reproducibility of Growing GaN Single Crystal / p81 (0044.jp2)
  19. §3.5 Characterization of the GaN Single Crystal Utilizing ZnO Buffer Layer / p92 (0050.jp2)
  20. §3.6 Conclusion / p115 (0061.jp2)
  21. References / p116 (0062.jp2)
  22. Chapter 4 Mg Doping in Homoepitaxial Growth of GaN / p118 (0063.jp2)
  23. §4.1 Introduction / p118 (0063.jp2)
  24. §4.2 Experimental Procedure / p120 (0064.jp2)
  25. §4.3 Homoepitaxy of Mg Doped GaN / p123 (0065.jp2)
  26. §4.4 Conclusion / p141 (0074.jp2)
  27. References / p142 (0075.jp2)
  28. Chapter 5 Silicon Doping in GaN by HVPE / p143 (0075.jp2)
  29. §5.1 Introduction / p143 (0075.jp2)
  30. §5.2 Experimental Procedure / p144 (0076.jp2)
  31. §5.3 Characterization of Si Doped GaN / p145 (0076.jp2)
  32. §5.4 Conclusion / p152 (0080.jp2)
  33. References / p152 (0080.jp2)
  34. Chapter 6 Selective Growth in HVPE of GaN / p153 (0080.jp2)
  35. §6.1 Introduction / p153 (0080.jp2)
  36. §6.2 Experimental Procedure / p155 (0081.jp2)
  37. §6.3 Characterization / p159 (0083.jp2)
  38. §6.4 Conclusion / p168 (0088.jp2)
  39. References / p169 (0088.jp2)
  40. Chapter 7 Summary and Prospects for Future Work / p170 (0089.jp2)
  41. Acknowledgement / p175 (0091.jp2)
  42. List of Papers / p177 (0092.jp2)
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Codes

  • NII Article ID (NAID)
    500000131782
  • NII Author ID (NRID)
    • 8000000132053
  • DOI(NDL)
  • NDLBibID
    • 000000296096
  • Source
    • NDL ONLINE
    • NDL Digital Collections

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