Fundamental studies on ZnCdSe/MgZnSSe compound semiconductor systems for blue/green laser diodes grown by molecular beam epitaxy

この論文をさがす

著者

    • 市村, 好克 イチムラ, ヨシカツ

書誌事項

タイトル

Fundamental studies on ZnCdSe/MgZnSSe compound semiconductor systems for blue/green laser diodes grown by molecular beam epitaxy

著者名

市村, 好克

著者別名

イチムラ, ヨシカツ

学位授与大学

上智大学

取得学位

博士 (工学)

学位授与番号

甲第164号

学位授与年月日

1996-03-31

注記・抄録

博士論文

目次

  1. Contents / p1 (0007.jp2)
  2. Chapter I / p1 (0011.jp2)
  3. Introduction / p1 (0011.jp2)
  4. I-1 Short Wavelength Laser Diodes and LEDs / p1 (0011.jp2)
  5. I-2 Historical Background of Research on II-VI Compounds / p3 (0013.jp2)
  6. I-3 Remaining Issues for MgZnSSe-Based Devices / p16 (0026.jp2)
  7. I-4 Purpose and Contents of this Thesis / p22 (0032.jp2)
  8. Chapter II / p25 (0035.jp2)
  9. Growth Conditions of MgZnSSe Compounds by Molecular Beam Epitaxy / p25 (0035.jp2)
  10. II-1 Introduction / p25 (0035.jp2)
  11. II-2 MBE System Configuration for II-VI Compounds / p25 (0035.jp2)
  12. II-3 Growth Conditions of MgZnSSe / p28 (0038.jp2)
  13. II-4 Doping Properties / p38 (0048.jp2)
  14. II-5 Conclusions / p41 (0051.jp2)
  15. Chapter III / p42 (0052.jp2)
  16. Substrate Misorientation Effects on Nitrogen-doped MgZnSSe Compounds / p42 (0052.jp2)
  17. III-1 Introduction / p42 (0052.jp2)
  18. III-2 Experimental Procedures / p43 (0053.jp2)
  19. III-3 Results / p44 (0054.jp2)
  20. III-4 Discussion / p51 (0061.jp2)
  21. III-5 Conclusions / p63 (0073.jp2)
  22. Chapter IV / p64 (0074.jp2)
  23. Thermal Annealing Effects on Optical and Electrical Characteristics of MgZnSSe and ZnCdSe/Zn(S)Se MQW LED / p64 (0074.jp2)
  24. IV-1 Introduction / p64 (0074.jp2)
  25. IV-2 Experimental Procedures / p65 (0075.jp2)
  26. IV-3 Results and Discussion / p66 (0076.jp2)
  27. IV-4 Conclusions / p78 (0088.jp2)
  28. Chapter V / p80 (0090.jp2)
  29. Effect of ZnSe/ZnSSe Strained Superlattice-Buffer Layer for ZnCdSe/MgZnSSe QW / p80 (0090.jp2)
  30. V-l Introduction / p80 (0090.jp2)
  31. V-2 Experimental Procedures / p81 (0091.jp2)
  32. V-3 Results / p82 (0092.jp2)
  33. V-4 Discussion / p88 (0098.jp2)
  34. V-5 Conclusions / p96 (0106.jp2)
  35. Chapter VI / p97 (0107.jp2)
  36. Fabrication of ZnCdSe/(ZnSe/ZnSSe)/MgZnSSe SQW-SCH Laser Diodes on ZnSe/ZnSSe Suprlattice-bufTer Layer / p97 (0107.jp2)
  37. VI-1 Introduction / p97 (0107.jp2)
  38. VI-2 ZnCdSe/(ZnSe/ZnSSe)/MgZnSSe SQW-SCH Laser Diodes on ZnSe/ZnSSe SL-buffer Layers / p97 (0107.jp2)
  39. VI-3 Room Temperature Operation of ZnCdSe/MgZnSSe-Based Lasers / p100 (0110.jp2)
  40. VI-4 Conclusions / p108 (0118.jp2)
  41. Chapter VII / p109 (0119.jp2)
  42. MBE Regrowth of II-VI Compounds on Low Temperature Plasma Cleaned MgZnSSe Epitaxial Layer / p109 (0119.jp2)
  43. VII-1 Introduction / p109 (0119.jp2)
  44. VII-2 H₂/He Plasma Condition and Preparation of Substrate / p110 (0120.jp2)
  45. VII-3 H₂/He Plasma Cleaning and MBE Regrowth of Zn(S)Se on MgZnSSe / p112 (0122.jp2)
  46. VII-4 Damage Induced by Plasma Cleaning / p116 (0126.jp2)
  47. VII-5 Conclusions / p120 (0130.jp2)
  48. Chapter VIII / p121 (0131.jp2)
  49. Concluding Remarks / p121 (0131.jp2)
  50. Acknowledgments / p124 (0134.jp2)
  51. References / p126 (0136.jp2)
  52. List of Publications / p132 (0142.jp2)
0アクセス

各種コード

  • NII論文ID(NAID)
    500000132084
  • NII著者ID(NRID)
    • 8000000966707
  • DOI(NDL)
  • NDL書誌ID
    • 000000296398
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
ページトップへ