Semiconductor lasers and high electron mobility transistors (HEMTs) using InP-related materials InP関連材料を用いた半導体レーザと高電子移動度トランジスタに関する研究
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著者
書誌事項
- タイトル
-
Semiconductor lasers and high electron mobility transistors (HEMTs) using InP-related materials
- タイトル別名
-
InP関連材料を用いた半導体レーザと高電子移動度トランジスタに関する研究
- 著者名
-
吉田, 直人
- 著者別名
-
ヨシダ, ナオヒト
- 学位授与大学
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名古屋工業大学
- 取得学位
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博士 (工学)
- 学位授与番号
-
乙第98号
- 学位授与年月日
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1996-03-15
注記・抄録
博士論文
目次
- Contents / p1 (0003.jp2)
- 1.General Introduction / p1 (0005.jp2)
- 1.1.InP-related compounds material / p1 (0005.jp2)
- 1.2.Application to semiconductor lasers / p3 (0006.jp2)
- 1.3.Application to electron devices / p5 (0007.jp2)
- 1.4.Purposes and summary / p6 (0008.jp2)
- References / p14 (0012.jp2)
- 2.Fabrication of InGaAsP/InP DFB Laser by MOCVD / p16 (0013.jp2)
- 2.1.Introduction / p16 (0013.jp2)
- 2.2.MOCVD growth of InGaAsP / p16 (0013.jp2)
- 2.3.Growth on corrugated substrates / p24 (0017.jp2)
- 2.4.Fabrication of InGaAsP/InP DFB laser / p28 (0019.jp2)
- 2.5.Device characteristics / p32 (0021.jp2)
- 2.6.Conclusion / p32 (0021.jp2)
- References / p38 (0024.jp2)
- 3.InGaAsP/InP DFB Laser with a New Grating Structure by MOCVD / p39 (0024.jp2)
- 3.1.Introduction / p39 (0024.jp2)
- 3.2.Approach to improve the controllability of coupling constant / p39 (0024.jp2)
- 3.3.Fabrication procedure / p43 (0026.jp2)
- 3.4.Device characteristics / p43 (0026.jp2)
- 3.5.Conclusion / p47 (0028.jp2)
- References / p51 (0030.jp2)
- 4.InGaAsP/InP DFB Laser with QW active layer / p52 (0031.jp2)
- 4.1Introduction / p52 (0031.jp2)
- 4.2.Growth of InGaAs/InGaAsP QW structure / p52 (0031.jp2)
- 4.3.InGaAs/InGaAsP MQW-DFB laser / p56 (0033.jp2)
- 4.4.Conclusion / p64 (0037.jp2)
- References / p66 (0038.jp2)
- 5.Low Noise AlInAs/InGaAs HEMT Introduction / p67 (0038.jp2)
- 5.1.Introduction / p67 (0038.jp2)
- 5.2.Kink effect of AlInAs/InGaAs HEMT / p67 (0038.jp2)
- 5.3.AlInAs/InGaAs HEMT on InP with 0.15μm T-shaped gate / p77 (0043.jp2)
- References / p87 (0048.jp2)
- 6.A Super Low Noise AlInAs/InGaAs HEMT Processed by Selective Wet Gate Recess Etching / p88 (0049.jp2)
- 6.1.Introduction / p88 (0049.jp2)
- 6.2.Selective etching for gate recess formation / p88 (0049.jp2)
- 6.3.Device fabrication using selective recess etching / p89 (0049.jp2)
- 6.4.Device performances and analyses / p92 (0051.jp2)
- 6.5.Conclusions / p101 (0055.jp2)
- References / p102 (0056.jp2)
- 7.Degradation of AuGe/Ni/Au Ohmic Contacts and High Reliability of WSi Non-Alloyed Ohmic Contacts on AlInAs/InGaAs HEMT / p104 (0057.jp2)
- 7.1.Introduction / p104 (0057.jp2)
- 7.2.Experimental / p104 (0057.jp2)
- 7.3.Thermal degradation of AuGe/Ni/Au ohmic contact / p106 (0058.jp2)
- 7.4.Thermal stability of WSi ohmic contact and application to device / p111 (0060.jp2)
- 7.5.Conclusions / p115 (0062.jp2)
- References / p118 (0064.jp2)
- 8.Summary / p119 (0064.jp2)
- Acknowledgements / p124 (0067.jp2)
- List of publications / p125 (0067.jp2)