Development of an electron beam excited plasma and its application 電子ビーム励起プラズマの開発と応用
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著者
書誌事項
- タイトル
-
Development of an electron beam excited plasma and its application
- タイトル別名
-
電子ビーム励起プラズマの開発と応用
- 著者名
-
浜垣, 学
- 著者別名
-
ハマガキ, マナブ
- 学位授与大学
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埼玉大学
- 取得学位
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博士 (工学)
- 学位授与番号
-
乙第33号
- 学位授与年月日
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1996-03-25
注記・抄録
博士論文
目次
- ABSTRACT / p1 (0003.jp2)
- CONTENTS / p3 (0005.jp2)
- 1.Introduction / p1 (0008.jp2)
- 1-1.Plasma production by low-energy electron beam / p1 (0008.jp2)
- 1-2.Purpose of this work / p2 (0009.jp2)
- References / p4 (0011.jp2)
- 2.Electron beam excited plasma(EBEP)system / p7 (0014.jp2)
- 2-1.Introduction / p7 (0014.jp2)
- 2-2.EBEP system / p8 (0015.jp2)
- 2-3.Characteristics of the electron beam / p10 (0017.jp2)
- 2-4.Acceleration mechanism for the electron beam / p10 (0017.jp2)
- 2-5.Electron velocity distribution / p17 (0024.jp2)
- 2-6.Electron velocity distribution for various incident angles / p19 (0026.jp2)
- 2-7.Control of the floating potential / p25 (0032.jp2)
- 2-8.Radial profiles of plasma parameters / p30 (0037.jp2)
- 2-9.Ion saturation current / p34 (0041.jp2)
- 2-10.Model of plasma production for EBEP / p37 (0044.jp2)
- 2-11.Summary / p40 (0047.jp2)
- References / p41 (0048.jp2)
- 3.DC high-current EBEP system / p45 (0052.jp2)
- 3-1.Introduction / p45 (0052.jp2)
- 3-2.Experimental apparatus / p45 (0052.jp2)
- 3-3.Characteristics of high-current electron beam / p47 (0054.jp2)
- 3-4.Summary / p50 (0057.jp2)
- References / p52 (0059.jp2)
- 4.Quasi-steady high-current EBEP system / p53 (0060.jp2)
- 4-1.Introduction / p53 (0060.jp2)
- 4-2.Experimental apparatus / p54 (0061.jp2)
- 4-3.Characteristics of high-current electron beam / p56 (0063.jp2)
- 4-4.Summary / p62 (0069.jp2)
- References / p63 (0070.jp2)
- 5.Etching system using EBEP / p65 (0072.jp2)
- 5-1.Introduction / p65 (0072.jp2)
- 5-2.Large-diameter etching system / p66 (0073.jp2)
- 5-3.Etching of GaAs / p78 (0085.jp2)
- 5-4.Etching of nanometer structure / p78 (0085.jp2)
- 5-5.Etching of laser diodes / p81 (0088.jp2)
- 5-6.Summary / p81 (0088.jp2)
- References / p83 (0090.jp2)
- 6.Analysis system using EBEP(SNART) / p86 (0093.jp2)
- 6-1.Introduction / p86 (0093.jp2)
- 6-2.SNART / p87 (0094.jp2)
- 6-3.Analysis of conductive samples / p89 (0096.jp2)
- 6-4.Analysis of insulator sample / p96 (0103.jp2)
- 6-5.Summary / p98 (0105.jp2)
- References / p100 (0107.jp2)
- 7.Compact EBEP device with narrow gap electrodes / p102 (0109.jp2)
- 7-1.Introduction / p102 (0109.jp2)
- 7-2.Compact EBEP device / p103 (0110.jp2)
- 7-3.Principle of the electron beam / p103 (0110.jp2)
- 7-4.Characteristics of the electron beam / p105 (0112.jp2)
- 7-5.Plasma density / p107 (0114.jp2)
- 7-6.Control of sheath potential / p107 (0114.jp2)
- 7-7.Ion source using compact EBEP device / p111 (0118.jp2)
- 7-8.Summary / p114 (0121.jp2)
- References / p116 (0123.jp2)
- 8.Conclusions / p118 (0125.jp2)
- Acknowledgements / p120 (0127.jp2)
- Appendix A:Probe characteristic / p121 (0128.jp2)
- Appendix B:Double layer / p123 (0130.jp2)
- Appendix C:Mean free path / p130 (0137.jp2)
- Appendix D:Space charge limited current / p132 (0139.jp2)
- List of published papers / p136 (0143.jp2)