Development of an electron beam excited plasma and its application 電子ビーム励起プラズマの開発と応用

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著者

    • 浜垣, 学 ハマガキ, マナブ

書誌事項

タイトル

Development of an electron beam excited plasma and its application

タイトル別名

電子ビーム励起プラズマの開発と応用

著者名

浜垣, 学

著者別名

ハマガキ, マナブ

学位授与大学

埼玉大学

取得学位

博士 (工学)

学位授与番号

乙第33号

学位授与年月日

1996-03-25

注記・抄録

博士論文

目次

  1. ABSTRACT / p1 (0003.jp2)
  2. CONTENTS / p3 (0005.jp2)
  3. 1.Introduction / p1 (0008.jp2)
  4. 1-1.Plasma production by low-energy electron beam / p1 (0008.jp2)
  5. 1-2.Purpose of this work / p2 (0009.jp2)
  6. References / p4 (0011.jp2)
  7. 2.Electron beam excited plasma(EBEP)system / p7 (0014.jp2)
  8. 2-1.Introduction / p7 (0014.jp2)
  9. 2-2.EBEP system / p8 (0015.jp2)
  10. 2-3.Characteristics of the electron beam / p10 (0017.jp2)
  11. 2-4.Acceleration mechanism for the electron beam / p10 (0017.jp2)
  12. 2-5.Electron velocity distribution / p17 (0024.jp2)
  13. 2-6.Electron velocity distribution for various incident angles / p19 (0026.jp2)
  14. 2-7.Control of the floating potential / p25 (0032.jp2)
  15. 2-8.Radial profiles of plasma parameters / p30 (0037.jp2)
  16. 2-9.Ion saturation current / p34 (0041.jp2)
  17. 2-10.Model of plasma production for EBEP / p37 (0044.jp2)
  18. 2-11.Summary / p40 (0047.jp2)
  19. References / p41 (0048.jp2)
  20. 3.DC high-current EBEP system / p45 (0052.jp2)
  21. 3-1.Introduction / p45 (0052.jp2)
  22. 3-2.Experimental apparatus / p45 (0052.jp2)
  23. 3-3.Characteristics of high-current electron beam / p47 (0054.jp2)
  24. 3-4.Summary / p50 (0057.jp2)
  25. References / p52 (0059.jp2)
  26. 4.Quasi-steady high-current EBEP system / p53 (0060.jp2)
  27. 4-1.Introduction / p53 (0060.jp2)
  28. 4-2.Experimental apparatus / p54 (0061.jp2)
  29. 4-3.Characteristics of high-current electron beam / p56 (0063.jp2)
  30. 4-4.Summary / p62 (0069.jp2)
  31. References / p63 (0070.jp2)
  32. 5.Etching system using EBEP / p65 (0072.jp2)
  33. 5-1.Introduction / p65 (0072.jp2)
  34. 5-2.Large-diameter etching system / p66 (0073.jp2)
  35. 5-3.Etching of GaAs / p78 (0085.jp2)
  36. 5-4.Etching of nanometer structure / p78 (0085.jp2)
  37. 5-5.Etching of laser diodes / p81 (0088.jp2)
  38. 5-6.Summary / p81 (0088.jp2)
  39. References / p83 (0090.jp2)
  40. 6.Analysis system using EBEP(SNART) / p86 (0093.jp2)
  41. 6-1.Introduction / p86 (0093.jp2)
  42. 6-2.SNART / p87 (0094.jp2)
  43. 6-3.Analysis of conductive samples / p89 (0096.jp2)
  44. 6-4.Analysis of insulator sample / p96 (0103.jp2)
  45. 6-5.Summary / p98 (0105.jp2)
  46. References / p100 (0107.jp2)
  47. 7.Compact EBEP device with narrow gap electrodes / p102 (0109.jp2)
  48. 7-1.Introduction / p102 (0109.jp2)
  49. 7-2.Compact EBEP device / p103 (0110.jp2)
  50. 7-3.Principle of the electron beam / p103 (0110.jp2)
  51. 7-4.Characteristics of the electron beam / p105 (0112.jp2)
  52. 7-5.Plasma density / p107 (0114.jp2)
  53. 7-6.Control of sheath potential / p107 (0114.jp2)
  54. 7-7.Ion source using compact EBEP device / p111 (0118.jp2)
  55. 7-8.Summary / p114 (0121.jp2)
  56. References / p116 (0123.jp2)
  57. 8.Conclusions / p118 (0125.jp2)
  58. Acknowledgements / p120 (0127.jp2)
  59. Appendix A:Probe characteristic / p121 (0128.jp2)
  60. Appendix B:Double layer / p123 (0130.jp2)
  61. Appendix C:Mean free path / p130 (0137.jp2)
  62. Appendix D:Space charge limited current / p132 (0139.jp2)
  63. List of published papers / p136 (0143.jp2)
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各種コード

  • NII論文ID(NAID)
    500000133930
  • NII著者ID(NRID)
    • 8000000968240
  • DOI(NDL)
  • NDL書誌ID
    • 000000298244
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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