Characterization of non-uniform multilayer semiconductor structures by automated spectroscopic ellipsometry 自動分光エリプソメトリーによる不均一多層半導体構造の評価

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Author

    • Magdi Ezzat El-ghazzawi マグデ エザト エリガザウィ

Bibliographic Information

Title

Characterization of non-uniform multilayer semiconductor structures by automated spectroscopic ellipsometry

Other Title

自動分光エリプソメトリーによる不均一多層半導体構造の評価

Author

Magdi Ezzat El-ghazzawi

Author(Another name)

マグデ エザト エリガザウィ

University

東京農工大学

Types of degree

博士 (工学)

Grant ID

博工甲第131号

Degree year

1996-03-25

Note and Description

博士論文

Table of Contents

  1. CONTENTS / p5 (0006.jp2)
  2. ACKNOWLEDGMENTS / p4 (0005.jp2)
  3. CONTENTS / p5 (0006.jp2)
  4. ABBREVIATIONS AND LIST OF SYMBOLS / p9 (0010.jp2)
  5. PREFACE / p20 (0021.jp2)
  6. ABSTRACT / p26 (0027.jp2)
  7. CHAPTER 1 / (0034.jp2)
  8. INTRODUCTION / p1 (0034.jp2)
  9. 1.1 Early Work / p2 (0035.jp2)
  10. 1.2 Bulk Silicon against SOI Technologies / p3 (0036.jp2)
  11. 1.3 SOI Wafer Bonding Fabrication Process / p6 (0039.jp2)
  12. 1.4 SIMOX against Directly Bonded SOI Technologies / p7 (0040.jp2)
  13. 1.5 Survey on other Measurements and Characterization Techniques / p7 (0040.jp2)
  14. 1.6 Objective of The Present Research / p12 (0045.jp2)
  15. CHAPTER 2 / (0047.jp2)
  16. THEORETICAL BASES / p14 (0047.jp2)
  17. 2.1 Introduction / p15 (0048.jp2)
  18. 2.2 Parameters Measured by The Ellipsometer / p17 (0050.jp2)
  19. 2.3 Operational Principle of the Optical System / p20 (0053.jp2)
  20. 2.4 Conversion of the Ellipsometric Parameters to either N,K or N,T / p28 (0061.jp2)
  21. 2.5 Mathematical Modeling of Multilayer Structures / p32 (0065.jp2)
  22. 2.6 Calculation of Indices' Mixtures,Effective Medium Approximation(EMA) / p37 (0070.jp2)
  23. 2.7 Linear Regression Principle / p40 (0073.jp2)
  24. CHAPTER 3 / (0076.jp2)
  25. EXPERIMENTAL DETAILS / p43 (0076.jp2)
  26. 3.1 Introduction / p44 (0077.jp2)
  27. 3.2 Details of the employed Spectroscopic Ellipsometer Setup / p44 (0077.jp2)
  28. 3.3 Sample Approach / p49 (0082.jp2)
  29. 3.4 Background Noise Measurements / p50 (0083.jp2)
  30. 3.5 Angle of Incidence Setting / p50 (0083.jp2)
  31. 3.6 Manual Mapping Stage and A Microspot Option / p51 (0084.jp2)
  32. 3.7 Instrument Calibration / p51 (0084.jp2)
  33. 3.8 Measurement System Mechanism / p55 (0088.jp2)
  34. 3.9 Analytical Approach / p55 (0088.jp2)
  35. 3.10 Accuracy And Limitations Of The Employed Technique / p58 (0091.jp2)
  36. CHAPTER 4 / (0093.jp2)
  37. EVALUATION OF SILICON-ON-INSULATOR(SOI)STRUCTURES FABRICATED BY DIRECTLY BONDING TECHNOLOGY USING VISIBLE SPECTROSCOPIC ELLIPSOMETRY TECHNIQUE / p60 (0093.jp2)
  38. 4.1 Introduction / p61 (0094.jp2)
  39. 4.2 Samples Specifications / p62 (0095.jp2)
  40. 4.3 Measurement Conditions / p62 (0095.jp2)
  41. 4.4 Analytical Results of Directly Bonded SOI Structures / p63 (0096.jp2)
  42. CHAPTER 5 / (0119.jp2)
  43. DIRECTLY BONDED SILICON-ON-INSULATOR(SOI)DATA ANALYSIS,INTERPRETATIONS AND DISCUSSIONS / p86 (0119.jp2)
  44. 5.1 Introduction / p87 (0120.jp2)
  45. 5.2 A Comparative Study of Directly Bonded SOI Wafer Structures using both S R and S E Techniques / p87 (0120.jp2)
  46. 5.3 Directly Bonded Silicon-On-Insulator(SOI),Data Analysis,Interpretations and Discussions / p88 (0121.jp2)
  47. CHAPTER 6 / (0130.jp2)
  48. EVALUATION OF PROCESSED DIRECTLY BONDED SILICON-ON-INSULATOR(SOI)STRUCTURES WITH OXIDE-NITRIDE-OXIDE(ONO)FILMS USING VISIBLE SPECTROSCOPIC ELLIPSOMETRY(SE)TECHNIQUE / p97 (0130.jp2)
  49. 6.1 Introduction / p98 (0131.jp2)
  50. 6.2 Sample Preparation Conditions / p99 (0132.jp2)
  51. 6.3 Measurement Conditions / p99 (0132.jp2)
  52. 6.4 Analytical Results of Processed Directly Bonded SOI Structures / p99 (0132.jp2)
  53. CHAPTER 7 / (0165.jp2)
  54. ELLIPSOMETRIC DATA ANALYSIS,INTERPRETATIONS AND DISCUSSIONS FOR PROCESSED DIRECTLY BONDED SILICON-ON-INSULATOR(SOI)STRUCTURES WITH OXIDE-NITRIDE-OXIDE(ONO)FILMS DEPOSITED ON THEM / p132 (0165.jp2)
  55. 7.1 Introduction / p133 (0166.jp2)
  56. 7.2 Ellipsometric Data Analysis,Interpretations and Discussions for Processed Directly Bonded Silicon-On-Insulator(SOI)Structures with Oxide-Nitride-Oxide(ONO)Films Deposited on them / p133 (0166.jp2)
  57. CHAPTER 8 / (0180.jp2)
  58. SUMMARY AND GENERAL CONCLUSIONS / p147 (0180.jp2)
  59. 8.1 Introduction / p148 (0181.jp2)
  60. 8.2 Summary and General Conclusions / p148 (0181.jp2)
  61. APPENDICES / p153 (0186.jp2)
  62. Appendix A:The Microsoft Quick Basic Program Prepared to Investigate the Samples' Depolarization Effect / p154 (0187.jp2)
  63. Appendix B:Directly Bonded Silicon-On-lnsulator(SOI)Layer Structures on C-Si Substrate Data Sheets / p161 (0194.jp2)
  64. Appendix C:The Optical Functions of the Employed Materials / p169 (0202.jp2)
  65. REFERENCES / p174 (0207.jp2)
  66. INTERNATIONAL CONFERENCES,DOMESTIC MEETINGS,AND PUBLICATIONS / p181 (0214.jp2)
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Codes

  • NII Article ID (NAID)
    500000134550
  • NII Author ID (NRID)
    • 8000000134821
  • DOI(NDL)
  • NDLBibID
    • 000000298864
  • Source
    • NDL ONLINE
    • NDL Digital Collections

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