【12/14(木)17時より】CiNiiの常時SSL化(HTTPS接続)について

In situ optical monitoring and control of metalorganic vapor phase epitaxy 有機金属気相成長の光学的その場観察と制御

この論文をさがす

著者

    • 小林, 康之 コバヤシ, ヤスユキ

書誌事項

タイトル

In situ optical monitoring and control of metalorganic vapor phase epitaxy

タイトル別名

有機金属気相成長の光学的その場観察と制御

著者名

小林, 康之

著者別名

コバヤシ, ヤスユキ

学位授与大学

東京農工大学

取得学位

博士 (工学)

学位授与番号

博工乙第20号

学位授与年月日

1996-03-25

注記・抄録

博士論文

目次

  1. Contents / p1 (0003.jp2)
  2. 1 Introduction / p1 (0004.jp2)
  3. 1.1 MBE and MOVPE growth / p1 (0004.jp2)
  4. 1.2 In situ monitoring methods / p5 (0006.jp2)
  5. 1.3 Surface Photo-Absorption(SPA) / p7 (0007.jp2)
  6. 1.4 The organization of this paper / p12 (0010.jp2)
  7. References / p14 (0011.jp2)
  8. 2 As and P desorption from III-V semiconductor surface in MOVPE / p17 (0012.jp2)
  9. 2.1 Introduction / p17 (0012.jp2)
  10. 2.2 Experimental procedure / p18 (0013.jp2)
  11. 2.3 SPA observation on As and P desorption from III-V semiconductor surface / p18 (0013.jp2)
  12. 2.4 Arrhenius plots of desorption rate constants / p20 (0014.jp2)
  13. 2.5 Conclusions / p23 (0015.jp2)
  14. References / p23 (0015.jp2)
  15. 3 Effect of strain on source gas decomposition and group V desorption in MOVPE / p24 (0016.jp2)
  16. 3.1 Introduction / p24 (0016.jp2)
  17. 3.2 Experimental procedure / p24 (0016.jp2)
  18. 3.3 Effect of strain on PH₃ decomposition / p25 (0016.jp2)
  19. 3.4 Effect of strain on P and As desorption / p27 (0017.jp2)
  20. 3.5 Conclusions / p32 (0020.jp2)
  21. References / p32 (0020.jp2)
  22. 4 Structure of group V surfaces in MOVPE / p33 (0020.jp2)
  23. 4.1 Introduction / p33 (0020.jp2)
  24. 4.2 Experimental / p34 (0021.jp2)
  25. 4.3 SPA subtraction spectra of As surface in GaAs / p35 (0021.jp2)
  26. 4.4 Phase diagram of As-stabilized GaAs surfaces / p38 (0023.jp2)
  27. 4.5 SPA spectra of P-stabilized surface in InP / p42 (0025.jp2)
  28. 4.6 Dependences of P surface structure on InP layer quality / p45 (0026.jp2)
  29. 4.7 Conclusions / p48 (0028.jp2)
  30. References / p48 (0028.jp2)
  31. 5 In situ monitoring and control of atomic layer epitaxy / p50 (0029.jp2)
  32. 5.1 Introduction / p50 (0029.jp2)
  33. 5.2 Experimental procedure / p51 (0029.jp2)
  34. 5.3 SPA study of the group III source decomposition process and ALE mechanism / p51 (0029.jp2)
  35. 5.4 In situ monitoring and controlling of ALE / p62 (0035.jp2)
  36. 5.5 Conclusions / p67 (0037.jp2)
  37. References / p67 (0037.jp2)
  38. 6 In situ monitoring and control of pseudomorphic InAs/InP heterostructure growth / p69 (0038.jp2)
  39. 6.1 Introduction / p69 (0038.jp2)
  40. 6.2 Experiments / p69 (0038.jp2)
  41. 6.3 SPA observation of As/P and P/As exchange reaction in InAs-on-InP and in InP-on-InAs heterostructure growth / p70 (0039.jp2)
  42. 6.4 Pseudomorphic InAs/InP single and multiple quantum well growths using in-situ controlled MOVPE / p79 (0043.jp2)
  43. 6.5 Conclusions / p89 (0048.jp2)
  44. References / p89 (0048.jp2)
  45. 7 Conclusions / p91 (0049.jp2)
  46. Acknowledgments / p96 (0052.jp2)
  47. Papers list / p97 (0052.jp2)
1アクセス

各種コード

  • NII論文ID(NAID)
    500000134593
  • NII著者ID(NRID)
    • 8000000973687
  • DOI(NDL)
  • NDL書誌ID
    • 000000298907
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
ページトップへ