Formation of high-quality thin films using dual-RF-excitation plasma 二周波励起プラズマを用いた高品質薄膜形成の研究

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著者

    • 禹, 善雄 Woo, Sun-Woong

書誌事項

タイトル

Formation of high-quality thin films using dual-RF-excitation plasma

タイトル別名

二周波励起プラズマを用いた高品質薄膜形成の研究

著者名

禹, 善雄

著者別名

Woo, Sun-Woong

学位授与大学

東北大学

取得学位

博士 (工学)

学位授与番号

甲第5622号

学位授与年月日

1996-03-26

注記・抄録

博士論文

目次

  1. TABLE OF CONTENTS / p3 (0007.jp2)
  2. ABSTRACTS / p1 (0005.jp2)
  3. TABLE OF CONTENTS / p3 (0007.jp2)
  4. TABLE OF FIGURES / p5 (0009.jp2)
  5. TABLE OF PHOTOGRAPHS / p8 (0012.jp2)
  6. CHAPTER I. INTRODUCTION / p1 (0013.jp2)
  7. 1.1 Background of Present Studies / p1 (0013.jp2)
  8. 1.2 Objectives of Present Studies / p6 (0018.jp2)
  9. 1.3 Structure of Present Studies / p6 (0018.jp2)
  10. References / p8 (0020.jp2)
  11. CHAPTER II. Si EPITAXY / p14 (0026.jp2)
  12. 2.1 Introduction / p14 (0026.jp2)
  13. 2.2 Experimental Purpose / p17 (0029.jp2)
  14. 2.3 Experimental System and Procedure / p17 (0029.jp2)
  15. 2.4 Experimental Results and Discussion / p20 (0032.jp2)
  16. 2.5 Conclusion / p42 (0054.jp2)
  17. References / p43 (0055.jp2)
  18. CHAPTER III. CONTROL OF DOPANT CONCENTRATION BY SPUTTERING/PECVD COMBINATION / p47 (0059.jp2)
  19. 3.1 Introduction / p47 (0059.jp2)
  20. 3.2 New Control Method of Dopant Concentration / p48 (0060.jp2)
  21. 3.3 Experimental Purpose / p48 (0060.jp2)
  22. 3.4 Experimental Results and Discussion / p49 (0061.jp2)
  23. 3.5 Conclusion / p52 (0064.jp2)
  24. References / p52 (0064.jp2)
  25. CHAPTER IV. POLYCRYSTALLINE Si FORMATION / p53 (0065.jp2)
  26. 4.1 Introduction / p53 (0065.jp2)
  27. 4.2 Experimental Purpose / p55 (0067.jp2)
  28. 4.3 Experimental Results and Discussion / p56 (0068.jp2)
  29. 4.4 Conclusion / p80 (0092.jp2)
  30. References / p81 (0093.jp2)
  31. CHAPTER V. TWO-STEP PROCESS FOR HIGH QUALITY POLY-Si FORMATION / p86 (0098.jp2)
  32. 5.1 Concept of Two-Step Process / p86 (0098.jp2)
  33. 5.2 Experimental Purpose / p87 (0099.jp2)
  34. 5.3 Experimental Results and Discussion / p88 (0100.jp2)
  35. 5.4 Conclusion / p97 (0109.jp2)
  36. References / p98 (0110.jp2)
  37. CHAPTER VI. CONCLUSIONS OF PRESENT STUDIES / p99 (0111.jp2)
  38. ACKNOWLEDGMENTS / p101 (0113.jp2)
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各種コード

  • NII論文ID(NAID)
    500000134872
  • NII著者ID(NRID)
    • 8000000973953
  • DOI(NDL)
  • NDL書誌ID
    • 000000299186
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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