Studies of molecular beam epitaxial growth of Ⅲ-Ⅴ semiconductor on nonplanar substrates 段差基盤上でのⅢ-Ⅴ族半導体の分子線エピタキシャル成長に関する研究
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著者
書誌事項
- タイトル
-
Studies of molecular beam epitaxial growth of Ⅲ-Ⅴ semiconductor on nonplanar substrates
- タイトル別名
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段差基盤上でのⅢ-Ⅴ族半導体の分子線エピタキシャル成長に関する研究
- 著者名
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沈, 旭強
- 著者別名
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シン, キョクキョウ
- 学位授与大学
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東京大学
- 取得学位
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博士 (工学)
- 学位授与番号
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甲第11145号
- 学位授与年月日
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1995-03-29
注記・抄録
博士論文
目次
- TABLE of CONTENTS / p5 (0007.jp2)
- Abstract / p1 (0003.jp2)
- Acknowledgements / p2 (0004.jp2)
- Abbreviations / p4 (0006.jp2)
- Chapter1 Introduction / p9 (0011.jp2)
- §1.1 Historical Background / p10 (0012.jp2)
- §1.2 Motivations of the Present Work / p12 (0014.jp2)
- Chapter2 MBE Growth and SEM Characterizations of III-V Semiconductor on V-grooved GaAs Substrates / p14 (0016.jp2)
- §2.1 Introduction / p14 (0016.jp2)
- §2.2 Experimental Methods / p16 (0018.jp2)
- §2.3 Cross Sectional Observations of the(Ga, Al)As Heterostructures by SEM / p21 (0023.jp2)
- §2.4 The Growth of(In, Ga)As Heterostructures at V-grooves / p28 (0030.jp2)
- §2.5 Summary / p32 (0034.jp2)
- Chapter3 Surface Diffusion of Ga(In) Adatoms on(001)Surfaceusing(n11)A-(OOl)Nonplanar Substrates by μ-RHEED/SEM MBE / p33 (0035.jp2)
- §3.1 Introduction / p33 (0035.jp2)
- §3.2 Experimental Methods / p35 (0037.jp2)
- §3.3 Model / p38 (0040.jp2)
- §3.4 Arsenic Pressure Dependencies of Surface Diffusion Length of Ga on(nll)A-(001)GaAs Nonplanar Substrates / p42 (0044.jp2)
- §3.5 Ga Flux Dependence of Diffusion Length of Ga on the(001)GaAs Surface / p50 (0052.jp2)
- §3.6 Inter-Surface Diffusion of In on(001)InAs Surface Using(11l)A-(001)InAs Nonplanar Substrates / p55 (0057.jp2)
- §3.7 Discussions / p63 (0065.jp2)
- §3.8 Summary / p66 (0068.jp2)
- Chapter4 Inter-Surface Diffusion of Ga Atoms Between(lll)B-(001)GaAs Surfaces / p67 (0069.jp2)
- §4.1 Introduction / p67 (0069.jp2)
- §4.2 Experimental Methods / p69 (0071.jp2)
- §4.3 Surface Diffusion of Ga on the(001)Surface Along[110]Direction With(111)B Sidewalls / p70 (0072.jp2)
- §4.4 Diffusion Length of Ga on the(111)B Surface / p75 (0077.jp2)
- §4.5 Determinations of the Ratio of the Surface Diffusion Coefficient of(111)B and(001)Surfaces / p78 (0080.jp2)
- §4.6 Discussions / p81 (0083.jp2)
- §4.7 Summary / p84 (0086.jp2)
- Chapter5 Fabrications of GaAs/AlAs Quantum Wire Structures at the Bottom of V-grooves / p85 (0087.jp2)
- §5.1 Introduction / p85 (0087.jp2)
- §5.2 Quantum Well Tapering and Quantum-wire Structures / p86 (0088.jp2)
- §5.3 Multiple GaAs/AlAs QWRs Fabrication / p90 (0092.jp2)
- §5.4 Fabrication of Very Narrow Double QWRs / p95 (0097.jp2)
- §5.5 Single QWR Fabrication / p109 (0111.jp2)
- §5.6 Summary / p114 (0116.jp2)
- Chapter6 Summary / p115 (0117.jp2)
- References / p119 (0121.jp2)
- Publication Lists / p125 (0127.jp2)