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First-principles study on electronic and optical properties of Ⅲ-Ⅴ nitrides Ⅲ-Ⅴ族窒化物半導体の電子物性と光物性に関する第一原理的研究

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著者

    • 鈴木, 政勝 スズキ, マサカツ

書誌事項

タイトル

First-principles study on electronic and optical properties of Ⅲ-Ⅴ nitrides

タイトル別名

Ⅲ-Ⅴ族窒化物半導体の電子物性と光物性に関する第一原理的研究

著者名

鈴木, 政勝

著者別名

スズキ, マサカツ

学位授与大学

大阪大学

取得学位

博士 (理学)

学位授与番号

乙第7213号

学位授与年月日

1997-03-25

注記・抄録

博士論文

14401乙第07213号

博士(理学)

大阪大学

1997-03-25

13279

目次

  1. Abstract / p1 (0003.jp2)
  2. Acknowledgments / p3 (0005.jp2)
  3. Table of Contents / p5 (0007.jp2)
  4. List of Figures / p8 (0010.jp2)
  5. List of Tables / p11 (0013.jp2)
  6. 1 Introduction / p1 (0014.jp2)
  7. 1.1 Purpose of This Thesis / p1 (0014.jp2)
  8. 1.2 Wide Band Gap III-V Nitrides / p2 (0015.jp2)
  9. 1.3 Crystal Structures of III-V Nitrides / p4 (0017.jp2)
  10. 1.4 Previous Theoretical Studies / p10 (0023.jp2)
  11. 1.5 Outline of This Thesis / p10 (0023.jp2)
  12. 2 Electronic Band Structures of Bulk GaN and A1N / p12 (0025.jp2)
  13. 2.1 Method of First-Principles Band Calculations / p12 (0025.jp2)
  14. 2.2 Results of First-Principles Band Calculations / p14 (0027.jp2)
  15. 2.3 Strain Effect on Electronic Band Structures / p25 (0038.jp2)
  16. 3 Effective Mass Approximation / p29 (0042.jp2)
  17. 3.1 k・p Perturbation Theory / p29 (0042.jp2)
  18. 3.2 8×8 k・p Hamiltonian for Wurtzite / p31 (0044.jp2)
  19. 3.3 Analytical Solutions of 8×8 k・p Hamiltonian / p38 (0051.jp2)
  20. 3.4 2×2 and 6×6 k・p and Strain Hamiltonians / p42 (0055.jp2)
  21. 3.5 Analytical Solutions of 6×6 Hamiltonians / p48 (0061.jp2)
  22. 4 Numerical Derivation of Physical Parameters / p53 (0066.jp2)
  23. 4.1 Method of Numerical Derivation / p53 (0066.jp2)
  24. 4.2 Crystal-Field and Spin-Orbit Splitting Energies / p56 (0069.jp2)
  25. 4.3 Luttinger-like Parameters / p58 (0071.jp2)
  26. 4.4 Electron Effective Mass / p60 (0073.jp2)
  27. 4.5 Hole Effective Masses / p62 (0075.jp2)
  28. 4.6 Momentum Matrix Elements / p64 (0077.jp2)
  29. 4.7 Deformation Potentials / p66 (0079.jp2)
  30. 5 Subband Structures of GaN/AlGaN Quantum Wells / p68 (0081.jp2)
  31. 5.1 Method of Subband Calculations / p68 (0081.jp2)
  32. 5.2 Subband in Wurtzite Quantum Wells / p75 (0088.jp2)
  33. 5.3 Subband in Zincblende Quantum Wells / p78 (0091.jp2)
  34. 5.4 Strained Quantum Well Structure / p81 (0094.jp2)
  35. 5.5 Subband in Strained Wurtzite Quantum Wells / p82 (0095.jp2)
  36. 5.6 Subband in Strained Zincblende Quantum Wells / p87 (0100.jp2)
  37. 6 Optical Gains of Bulk GaN and GaN/AlGaN Quantum Wells / p89 (0102.jp2)
  38. 6.1 Optical Gain and Crystal Symmetry / p89 (0102.jp2)
  39. 6.2 Optical Gain of Bulk GaN / p92 (0105.jp2)
  40. 6.3 Optical Gain of Wurtzite Quantum Wells / p95 (0108.jp2)
  41. 6.4 Optical Gain of Strained Wurtzite Quantum Wells / p100 (0113.jp2)
  42. 6.5 Optical Gain of Zincblende Quantum Wells and Strain Effect / p104 (0117.jp2)
  43. 7 Conclusions / p107 (0120.jp2)
  44. References / p110 (0123.jp2)
  45. A Quasi-Cubic Approximation / p115 (0128.jp2)
  46. A.1 Invariant Theory of Wurtzite Valence Band States / p115 (0128.jp2)
  47. A.2 Invariant Theory of Zincblende Valence Band States / p119 (0132.jp2)
  48. A.3 Derivation of Quasi-Cubic Approximation / p121 (0134.jp2)
  49. B Band Lineup and Band Gap's Bowing of [化学式] Alloy / p125 (0138.jp2)
  50. List of Publications / p131 (0144.jp2)
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各種コード

  • NII論文ID(NAID)
    500000150185
  • NII著者ID(NRID)
    • 8000001061039
  • DOI(NDL)
  • NDL書誌ID
    • 000000314499
  • データ提供元
    • 機関リポジトリ
    • NDL-OPAC
    • NDLデジタルコレクション
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