Ultraviolet photoemission and inverse-photoemission spectroscopies of diluted magnetic semiconductor Cd[1-x]Mn[x]Te 希薄磁性半導体Cd[1-x]Mn[x]Teの真空紫外光電子・逆光電子分光
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Bibliographic Information
- Title
-
Ultraviolet photoemission and inverse-photoemission spectroscopies of diluted magnetic semiconductor Cd[1-x]Mn[x]Te
- Other Title
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希薄磁性半導体Cd[1-x]Mn[x]Teの真空紫外光電子・逆光電子分光
- Author
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三村, 功次郎
- Author(Another name)
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ミムラ, コウジロウ
- University
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広島大学
- Types of degree
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博士 (理学)
- Grant ID
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乙第2931号
- Degree year
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1997-02-10
Note and Description
博士論文
Valence-band and conduction-band densities of states (DOS's) of Cd1-xMnxTe epitaxial films (0 ≤ x ≤ 0.7) have been investigated by means of in situ measurements of ultraviolet photoemission and inverse-photoemission spectroscopies (UPS and IPES). Based on one-electron band theory, features observed at -3.4 and 3.6 eV relative to the valence-band maximum (VBM) are ascribed to emission from the Mn 3d↑ and 3d↓ states with eg symmetry, respectively, providing a Mn 3d spin-exchange splitting energy (Ueff) of 7.0±0.2 eV. This value compares well with the value predicted in the theoretical investigation of electronic structures and magnetic properties of Cd1-xMnxTe. With increasing Mn concentration, the energy position of the conduction-band minimum shifts almost linearly toward higher energy relative to the VBM as a result of an increasing contribution of the higher-lying Mn 4s level relative to the Cd 5s level. Mn 3d partial DOS's in the valence-band region of Cd1-xMnxTe have been determined from resonant photoemission spectroscopy in the Mn 3p-3d core excitation region. The partial DOS's reveal an appreciable contribution of the Mn 3d states to the top 9 eV of valence bands with three structures; valence bands at 0~-2.5 eV, a main peak at -3.4 eV and a multielectron satellite at -5~-9 eV. These features are almost independent of the Mn concentration. Apart from one-electron band theory, the whole spectrum including the multielectron satellite is found to be well reproduced in terms of the configuration interaction theory using a Mn2+(Te2-)4 model cluster. Electronic structures of zinc-blende MnTe epitaxial films have also been investigated by means of UPS and IPES. The Ueff-value of zinc-blende MnTe is in good agreement with those of Cd1-xMnxTe and Zn 1-xMnxTe. The width of valence bands and Ueff are by 1.3 eV narrower and by 0.3 eV larger than those of NiAs-type MnTe, respectively.
Contents Abstract / p1 Chapter1.Introduction / p2 References / p7 Chapter2.General description of photoemission and inverse-photoemission spectroscopies / p10 2-1.Photoemission spectroscopy / p10 2-2.Inverse-photoemission spectroscopy / p13 References / p17 Chapter3.Hot wall epitaxy(HWE) / p18 3-1.HWE method / p18 3-2.Details of the HWE apparatus for DMS / p20 References / p28 Chapter4.Experimental details I:ultraviolet photoemission and inverse-photoemission study / p29 4-1.Ultraviolet photoemission and inverse-photoemission spectrometers / p29 4-2.Sample preparation / p33 References / p45 Chapter5.Experimental details II:Resonant photoemission spectroscopy / p47 5-1.Photoemission measurements at SOR-RING / p47 5-2.Sample preparation / p47 References / p49 Chapter6.Results and discussion / p50 6-1.Photoemission and inverse-photoemission study of Cd1-xMnxTe / p50 6-2.Photoemission and inverse-photoemission study of zinc-blende MnTe / p71 References / p77 Chapter7 Conclusion / p80 Acknowledgments / p82
Table of Contents
- Contents / (0004.jp2)
- Abstract / p1 (0007.jp2)
- Chapter1.Introduction / p2 (0008.jp2)
- References / p7 (0013.jp2)
- Chapter2.General description of photoemission and inverse-photoemission spectroscopies / p10 (0016.jp2)
- 2-1.Photoemission spectroscopy / p10 (0016.jp2)
- 2-2.Inverse-photoemission spectroscopy / p13 (0019.jp2)
- References / p17 (0023.jp2)
- Chapter3.Hot wall epitaxy(HWE) / p18 (0024.jp2)
- 3-1.HWE method / p18 (0024.jp2)
- 3-2.Details of the HWE apparatus for DMS / p20 (0026.jp2)
- References / p28 (0034.jp2)
- Chapter4.Experimental details I:ultraviolet photoemission and inverse-photoemission study / p29 (0035.jp2)
- 4-1.Ultraviolet photoemission and inverse-photoemission spectrometers / p29 (0035.jp2)
- 4-2.Sample preparation / p33 (0039.jp2)
- References / p45 (0051.jp2)
- Chapter5.Experimental details II:Resonant photoemission spectroscopy / p47 (0053.jp2)
- 5-1.Photoemission measurements at SOR-RING / p47 (0053.jp2)
- 5-2.Sample preparation / p47 (0053.jp2)
- References / p49 (0055.jp2)
- Chapter6.Results and discussion / p50 (0056.jp2)
- 6-1.Photoemission and inverse-photoemission study of [化学式] / p50 (0056.jp2)
- 6-2.Photoemission and inverse-photoemission study of zinc-blende MnTe / p71 (0077.jp2)
- References / p77 (0083.jp2)
- Chapter7 Conclusion / p80 (0086.jp2)
- Acknowledgments / p82 (0088.jp2)
- Bandpass photon detector for inverse photoemission spectroscopy / p87 (0119.jp2)
- Performance of the inverse photoemission spectrometer with a new bandpass photon detector of narrow bandwidth and high sensitivity / p140 (0124.jp2)
- d⁴ identification of the satellite in the Mn 3d photoemission spectra of [化学式] Te alloys / p12211 (0129.jp2)
- PHOTOEMISSION AND EXAFS STUDIES OF [化学式]Te / p2497 (0133.jp2)
- Mn and Te K-edge EXAFS studies of Zn₁₋χMχTe / p291 (0138.jp2)
- Ultraviolet inverse photoemission and photoemission spectra of diluted magnetic semiconductor Zn₁₋χMnχTe / p4371 (0140.jp2)
- Mn 3d states in diluted magnetic semiconductor [化学式] / p13 (0154.jp2)
- ULTRAVIOLET INVERSE-PHOTOEMISSION AND PHOTOEMISSION SPECTROSCOPIES OF [化学式]Te FILMS GROWN BY HOT WALL EPITAXY / p911 (0158.jp2)
- Zn,Mn and Te K-edge EXAFS studies of the diluted magnetic semiconductor [化学式]Te / p4315 (0162.jp2)
- Mn 3d, 3p AND 3s RESONANT PHOTOEMISSION AT Mn 2p CORE THRESHOLD OF NiAs-TYPE MnTe / (0171.jp2)