Study of Ⅲ-Ⅵ compound semiconductors grown by molecular beam epitaxy 分子線エピタキシー法で成長したⅢ-Ⅵ族化合物半導体に関する研究

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Author

    • 岡本, 保 オカモト, タモツ

Bibliographic Information

Title

Study of Ⅲ-Ⅵ compound semiconductors grown by molecular beam epitaxy

Other Title

分子線エピタキシー法で成長したⅢ-Ⅵ族化合物半導体に関する研究

Author

岡本, 保

Author(Another name)

オカモト, タモツ

University

東京工業大学

Types of degree

博士 (工学)

Grant ID

乙第3008号

Degree year

1997-02-28

Note and Description

博士論文

Table of Contents

  1. 論文目録 / (0001.jp2)
  2. TABLE OF CONTENTS / (0005.jp2)
  3. Preface / (0004.jp2)
  4. Chapter 1 Overview and Objectives of This Study / p1 (0008.jp2)
  5. Chapter 2 Key Features of III-VI and II-III-VI Compound Semiconductors / p5 (0010.jp2)
  6. 2-1 Introduction / p5 (0010.jp2)
  7. 2-2 Physical Properties of III-VI Compound Semiconductors / p5 (0010.jp2)
  8. 2-3 Physical Properties of II-III-VI Compound Semiconductors / p17 (0016.jp2)
  9. Chapter 3 Molecular Beam Epitaxy of Ga₂Se₃ Thin Films / p19 (0017.jp2)
  10. 3-1 Introduction / p19 (0017.jp2)
  11. 3-2 Experimental Procedure / p19 (0017.jp2)
  12. 3-3 Growth and Characterization of Ga₂Se₃ Thin Films / p21 (0018.jp2)
  13. 3-4 Growth of Ga₂Se₃ Thin Films by Exchange Reaction between As and Se Atoms in GaAs / p49 (0032.jp2)
  14. 3-5 Summary / p52 (0034.jp2)
  15. Chapter 4 Structural Properties of Ga₂Se₃ Epitaxial Films / p55 (0035.jp2)
  16. 4-1 Introduction / p55 (0035.jp2)
  17. 4-2 Crystal Structure of Vacancy-Ordered Ga₂Se₃ / p55 (0035.jp2)
  18. 4-3 Observation of Vacancy Ordering in Ga₂Se₃ Epitaxial Films by Transmission Electron Microscopy / p59 (0037.jp2)
  19. 4-4 Characterization of Vacancy-Ordered Ga₂Se₃ Epitaxial Films by High Resolution X-Ray Diffraction / p62 (0039.jp2)
  20. 4-5 Characterization of Interface between Ga₂Se₃ Epitaxial Layer and Substrate / p67 (0041.jp2)
  21. 4-6 Summary / p71 (0043.jp2)
  22. Chapter 5 Optical and Electrical Properties of Ga₂Se₃ Films / p73 (0044.jp2)
  23. 5-1 Introduction / p73 (0044.jp2)
  24. 5-2 Optical Properties of Ga₂Se₃ Epitaxial Films / p73 (0044.jp2)
  25. 5-3 Electrical Properties of Ga₂Se₃ Thin Films / p90 (0053.jp2)
  26. 5-4 Summary / p100 (0058.jp2)
  27. Chapter 6 Molecular Beam Epitaxy and Characterization of In₂Se₃ Thin Films / p103 (0059.jp2)
  28. 6-1 Introduction / p103 (0059.jp2)
  29. 6-2 MBE Growth and Characterization of In₂Se₃ Thin Films / p103 (0059.jp2)
  30. 6-3 Optical and Electrical Properties of In₂Se₃ Thin Firms / p127 (0071.jp2)
  31. 6-4 Molecular Beam Epitaxy of (GaIn)₂Se₃ Thin Films / p137 (0076.jp2)
  32. 6-5 Summary / p141 (0078.jp2)
  33. Chapter 7 Epitaxial Growth and Characterization of ZnGa₂Se₄ Thin Films / p143 (0079.jp2)
  34. 7-1 Introduction / p143 (0079.jp2)
  35. 7-2 Experimental Procedure / p144 (0080.jp2)
  36. 7-3 Epitaxial Growth of ZnGa₂Se₄ Thin Films by Exposure of ZnSe Layer to Ga and Se Molecular Beam / p145 (0080.jp2)
  37. 7-4 Molecular Beam Epitaxial Growth of ZnGa₂Se₄ Thin Films / p178 (0097.jp2)
  38. 7-5 Photoconductivity of ZnGa₂Se₄ Thin Films / p182 (0099.jp2)
  39. 7-6 Summary / p186 (0101.jp2)
  40. Chapter 8 General Conclusions and Future Prospects / p189 (0102.jp2)
  41. Acknowledgment / p195 (0105.jp2)
  42. References / p197 (0106.jp2)
  43. List of Publications / p205 (0110.jp2)
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Codes

  • NII Article ID (NAID)
    500000153878
  • NII Author ID (NRID)
    • 8000001092892
  • DOI(NDL)
  • NDLBibID
    • 000000318192
  • Source
    • NDL ONLINE
    • NDL Digital Collections

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