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Preparation and surface nitridation of high quality GaAs substrates for selective area growth 選択成長のための高品質GaAs基板の作製と表面窒化の研究

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著者

    • 朴, 鏞柱 パク, ヨンジュ

書誌事項

タイトル

Preparation and surface nitridation of high quality GaAs substrates for selective area growth

タイトル別名

選択成長のための高品質GaAs基板の作製と表面窒化の研究

著者名

朴, 鏞柱

著者別名

パク, ヨンジュ

学位授与大学

東京工業大学

取得学位

博士 (工学)

学位授与番号

乙第3014号

学位授与年月日

1997-02-28

注記・抄録

博士論文

目次

  1. 論文目録 / (0001.jp2)
  2. Table of Contents / (0006.jp2)
  3. Abstract / p1 (0007.jp2)
  4. Chapter 1 Introduction / p1 (0009.jp2)
  5. 1.1 Background / p1 (0009.jp2)
  6. 1.2 Objectives of this study / p8 (0013.jp2)
  7. 1.3 Outline of this thesis / p10 (0014.jp2)
  8. Chapter 2 Methods for the preparation of high quality GaAs substrates / p15 (0016.jp2)
  9. 2.1 Vertical gradient freeze(VGF)growth technique / p15 (0016.jp2)
  10. 2.2 The use of a magnetic field to crystal growth / p19 (0018.jp2)
  11. 2.3 Growth of high quality GaAs single crystals / p23 (0020.jp2)
  12. 2.4 Summary / p43 (0030.jp2)
  13. Chapter 3 Characteristics of AM-VGF grown GaAs single crystals / p48 (0033.jp2)
  14. 3.1 High quality GaAs single crystal with low defects and high uniformity / p48 (0033.jp2)
  15. 3.2 Enhancement of thermal stability of EL2 deep level / p61 (0039.jp2)
  16. 3.3 Summary / p70 (0044.jp2)
  17. Chapter 4 Identification of charge compensation centers in VGF-GaAs single crystals / p75 (0046.jp2)
  18. 4.1 Electron paramagnetic resonance(EPR)center of transition metal ions in GaAs / p75 (0046.jp2)
  19. 4.2 Compensation by Cr centers in GaAs co-doped with Cr and In / p78 (0048.jp2)
  20. 4.3 Compensation by Mn centers in GaAs doped with Mn / p91 (0054.jp2)
  21. 4.4 Summary / p101 (0059.jp2)
  22. Chapter 5 Surface nitridation of GaAs substrates for selective area epitaxy / p106 (0062.jp2)
  23. 5.1 Characteristics of electron cyclotron resonance(ECR)plasma / p106 (0062.jp2)
  24. 5.2 Nitridation procedures / p128 (0073.jp2)
  25. 5.3 Summary / p135 (0076.jp2)
  26. Chapter 6 Application to the selective area growth and future prospects / p139 (0078.jp2)
  27. 6.1 Defects generated from the nitridation procedure / p139 (0078.jp2)
  28. 6.2 Plasma-induced thin GaAs nitride layer as a mask material for the selective area growth / p146 (0082.jp2)
  29. 6.3 Future prospects / p153 (0085.jp2)
  30. 6.4 Summary / p156 (0087.jp2)
  31. Chapter 7 Conclusions / p158 (0088.jp2)
  32. Acknowledgments / p161 (0089.jp2)
  33. A List of Publications and Conferences / p163 (0090.jp2)
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各種コード

  • NII論文ID(NAID)
    500000153884
  • NII著者ID(NRID)
    • 8000001092898
  • DOI(NDL)
  • NDL書誌ID
    • 000000318198
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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