Radical kinetics and its control in chemical vapor deposition of amorphous, microcrystalline and polycrystalline silicon thin films アモルファス, 微結晶および多結晶シリコン薄膜の化学気相堆積におけるラジカル反応過程とその制御に関する研究

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Author

    • 白藤, 立 シラフジ, タツル

Bibliographic Information

Title

Radical kinetics and its control in chemical vapor deposition of amorphous, microcrystalline and polycrystalline silicon thin films

Other Title

アモルファス, 微結晶および多結晶シリコン薄膜の化学気相堆積におけるラジカル反応過程とその制御に関する研究

Author

白藤, 立

Author(Another name)

シラフジ, タツル

University

京都大学

Types of degree

博士 (工学)

Grant ID

乙第9750号

Degree year

1998-01-23

Note and Description

博士論文

Table of Contents

  1. 論文目録 / (0001.jp2)
  2. Contents / p5 (0006.jp2)
  3. Abstract / p1 (0004.jp2)
  4. Acknowledgments / p3 (0005.jp2)
  5. 1.Introduction / p1 (0008.jp2)
  6. 1.1 PE-CVD of silicon thin films / p1 (0008.jp2)
  7. 1.2 Diagnostics / p3 (0009.jp2)
  8. 1.3 Modeling and simulation / p6 (0011.jp2)
  9. 1.4 Scope of the thesis / p9 (0012.jp2)
  10. 1.5 Constitution of the thesis / p10 (0013.jp2)
  11. References / p11 (0013.jp2)
  12. 2. Photo-CVD of a-Si:H using Si₂H₆ and 147 nm excitation / p15 (0015.jp2)
  13. 2.1 Introduction / p15 (0015.jp2)
  14. 2.2 Film preparation / p16 (0016.jp2)
  15. 2.3 Properties of a-Si:H films from Si₂H₆+147 nm / p19 (0017.jp2)
  16. 2.4 Doping characteristics / p32 (0024.jp2)
  17. 2.5 Summary / p38 (0027.jp2)
  18. References / p40 (0028.jp2)
  19. 3.Reaction kinetics in photo-CVD of a-Si:H / p43 (0029.jp2)
  20. 3.1 Introduction / p43 (0029.jp2)
  21. 3.2 Experiments / p44 (0030.jp2)
  22. 3.3 Gas-phase reaction simulation / p50 (0033.jp2)
  23. 3.4 Surface reaction simulation / p65 (0040.jp2)
  24. 3.5 Summary / p75 (0045.jp2)
  25. References / p76 (0046.jp2)
  26. 4.Reaction kinetics in PE-CVD of a-Si:H / p79 (0047.jp2)
  27. 4.1 Introduction / p79 (0047.jp2)
  28. 4.2 Measurement of SiH₂ radical density / p80 (0048.jp2)
  29. 4.3 Gas-phase reaction simulation / p84 (0050.jp2)
  30. 4.4 Surface reaction simulation / p96 (0056.jp2)
  31. 4.5 In situ surface observation / p99 (0057.jp2)
  32. 4.6 Summary / p101 (0058.jp2)
  33. References / p102 (0059.jp2)
  34. 5. Reaction kinetics in PE-CVD of poly-Si / p105 (0060.jp2)
  35. 5.1 Introduction / p105 (0060.jp2)
  36. 5.2 Deposition with SiF₄/SiH₄/H₂ / p106 (0061.jp2)
  37. 5.3 Gas-phase reaction simulation / p115 (0065.jp2)
  38. 5.4 Roles of fluorinated radicals / p118 (0067.jp2)
  39. 5.5 Roles of hydrogen radicals / p120 (0068.jp2)
  40. 5.6 Summary / p126 (0071.jp2)
  41. References / p128 (0072.jp2)
  42. 6.Conclusions / p131 (0073.jp2)
  43. 6.1 Conclusions / p131 (0073.jp2)
  44. 6.2 Future prospects / p132 (0074.jp2)
  45. References / p134 (0075.jp2)
  46. List of publication / p135 (0075.jp2)
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Codes

  • NII Article ID (NAID)
    500000154118
  • NII Author ID (NRID)
    • 8000001093128
  • DOI(NDL)
  • Text Lang
    • eng
  • NDLBibID
    • 000000318432
  • Source
    • Institutional Repository
    • NDL ONLINE
    • NDL Digital Collections

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