Transient capacitance spectroscopy study of deep levels in Ⅱ-Ⅵ compounds 過渡容量分光法によるⅡ-Ⅵ族化合物半導体中の深い準位の研究

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Author

    • 王, 守琦 ワン, シュキ

Bibliographic Information

Title

Transient capacitance spectroscopy study of deep levels in Ⅱ-Ⅵ compounds

Other Title

過渡容量分光法によるⅡ-Ⅵ族化合物半導体中の深い準位の研究

Author

王, 守琦

Author(Another name)

ワン, シュキ

University

東北大学

Types of degree

博士(工学)

Grant ID

甲第6603号

Degree year

1998-09-09

Note and Description

博士論文

Table of Contents

  1. Abstract / p1 (0004.jp2)
  2. CONTENTS / p2 (0005.jp2)
  3. 1.INTRODUCTION / p1 (0008.jp2)
  4. 1.1 BLUE/GREEN LIGHT EMITTING DEVICES AND II-VI SEMICONDUCTORS / p1 (0008.jp2)
  5. 1.2 DEVELOPMENT OF ZNSE-BASED LD / p2 (0009.jp2)
  6. 1.3 PROBLEMS OF ZNSE-BASE LD / p3 (0010.jp2)
  7. 1.4 MOTIVATION OF THE STUDY / p8 (0015.jp2)
  8. 2.PRINCIPLE OF CAPACITANCE TRANSIENT SPECTROSCOPY AND EXPERIMENTAL SET UP / p13 (0020.jp2)
  9. 2.1 INTRODUCTION / p13 (0020.jp2)
  10. 2.2 CAPACITANCE OF DEPLETION LAYER AND ITS TRANSIENT / p13 (0020.jp2)
  11. 2.3 CAPACITANCE SPECTROSCOPY / p18 (0025.jp2)
  12. 2.4 EXPERIMENTAL SET UP / p33 (0040.jp2)
  13. 3.STUDY OF DEEP LEVELS IN P-TYPE ZNSE:N USING CAPACITANCE TRANSIENT SPECTROSCOPY / p36 (0043.jp2)
  14. 3.1 INTRODUCTION / p36 (0043.jp2)
  15. 3.2 PRINCIPLE OF PHOTO CAPACITANCE TRANSIENT SPECTROSCOPY(PCTS) / p39 (0046.jp2)
  16. 3.3 EXPERIMENTAL DETAILS / p42 (0049.jp2)
  17. 3.4 NET ACCEPTOR CONCENTRATION / p43 (0050.jp2)
  18. 3.5 DETECTION OF ELECTRON TRAP / p49 (0056.jp2)
  19. 3.6 CHARATERIZATION OF ELECTRON TRAP BY PCTS / p56 (0063.jp2)
  20. 3.7 HOLE TRAP LEVEL CHARACTERIZED BY DLTS / p73 (0080.jp2)
  21. 3.8 DISCUSSION / p75 (0082.jp2)
  22. 3.9 SUMMARY / p77 (0084.jp2)
  23. 4.STUDY OF ELECTRONIC STATES IN P-TYPE ZNSE/ZNTE SUPERLATTICE USING CAPACITANCE TRANSIENT SPECTROSCOPY / p81 (0088.jp2)
  24. 4.1 INTRODUCTION / p81 (0088.jp2)
  25. 4.2 PRINCIPLE OF MEASUREMENTS / p83 (0090.jp2)
  26. 4.3 EXPERIMENTAL AND RESULTS / p87 (0094.jp2)
  27. 4.4 THEORETICAL ANALYSIS / p97 (0104.jp2)
  28. 4.5 DISCUSSION / p106 (0113.jp2)
  29. 4.6 CONCLUSION / p109 (0116.jp2)
  30. 5.ELECTROCHEMICAL DEEP LEVEL PROFILING TECHNIQUE / p112 (0119.jp2)
  31. 5.1 INTRODUCTION / p112 (0119.jp2)
  32. 5.2 PRINCIPLE OF MEASUREMENT / p114 (0121.jp2)
  33. 5.3 EXPERIMENTAL EQUIPMENT / p118 (0125.jp2)
  34. 5.4 ELECTRIC POTENTIAL AND BAND DIAGRAMS / p122 (0129.jp2)
  35. 5.5 DETERMINATION OF ELECTROCHEMICAL ETCHING CONDITIONS / p129 (0136.jp2)
  36. 5.6 PROFILING OF DOPING CONCENTRATION / p133 (0140.jp2)
  37. 5.7 PROFILING OF DEEP LEVELS / p139 (0146.jp2)
  38. 5.8 DISCUSSION / p146 (0153.jp2)
  39. 5.9 SUMMARY / p147 (0154.jp2)
  40. 6.CONCLUSIONS / p149 (0156.jp2)
  41. ACKNOWLEDGMENT / p152 (0159.jp2)
  42. LIST OF PUBLICATIONS / p154 (0161.jp2)
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Codes

  • NII Article ID (NAID)
    500000170622
  • NII Author ID (NRID)
    • 8000000170896
  • DOI(NDL)
  • NDLBibID
    • 000000334936
  • Source
    • NDL ONLINE
    • NDL Digital Collections
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