Molecular beam epitaxial growth and device application of Ⅱ-Ⅵ compound semiconductors Ⅱ-Ⅵ族化合物半導体の分子線エピタキシ成長と素子への応用

この論文をさがす

著者

    • 曺, 明煥 チョ, ミョンハン

書誌事項

タイトル

Molecular beam epitaxial growth and device application of Ⅱ-Ⅵ compound semiconductors

タイトル別名

Ⅱ-Ⅵ族化合物半導体の分子線エピタキシ成長と素子への応用

著者名

曺, 明煥

著者別名

チョ, ミョンハン

学位授与大学

東北大学

取得学位

博士(工学)

学位授与番号

甲第6932号

学位授与年月日

1999-03-25

注記・抄録

博士論文

目次

  1. ABSTRACT / p1 (0004.jp2)
  2. CONTENTS / p4 (0007.jp2)
  3. Chapter1.Introduction / p1 (0012.jp2)
  4. 1-1 Background / p1 (0012.jp2)
  5. 1-2 Objectives of this work / p4 (0015.jp2)
  6. 1-3 Outline of thesis / p4 (0015.jp2)
  7. 1-4 Equipment and experimental procedure / p6 (0017.jp2)
  8. References / p8 (0019.jp2)
  9. Part I.MBE Growth and Characterization of Be-chalcogenides / p10 (0021.jp2)
  10. Chapter2.Introduction / p10 (0021.jp2)
  11. 2-1 Background / p10 (0021.jp2)
  12. 2-2 Material properties of beryllium chalcogenides / p12 (0023.jp2)
  13. References / p16 (0027.jp2)
  14. Chapter3.MBE Growth and Characterization on Be-based Materials / p18 (0029.jp2)
  15. 3-1 Introduction / p19 (0030.jp2)
  16. 3-2 Experimental procedure / p20 (0031.jp2)
  17. 3-3 Optimization of MBE growth of BeTe films / p21 (0032.jp2)
  18. 3-4 Growth and evaluation of ZnBeSe films / p35 (0046.jp2)
  19. 3-5 Growth and evaluation of ZnMgBeSe films / p40 (0051.jp2)
  20. 3-6 Summary / p47 (0058.jp2)
  21. References / p49 (0060.jp2)
  22. Chapter4.Optical Properties of ZnSe/ZnMgBeSe Quantum Well Structures / p51 (0062.jp2)
  23. 4-1 Introduction / p51 (0062.jp2)
  24. 4-2 Evaluation of band offsets in ZnSe/ZnMgBeSe SQW / p53 (0064.jp2)
  25. 4-3 Summary / p65 (0076.jp2)
  26. References / p66 (0077.jp2)
  27. Chapter5.Device Characterization / p68 (0079.jp2)
  28. 5-1 Introduction / p68 (0079.jp2)
  29. 5-2 Experimental procedure / p69 (0080.jp2)
  30. 5-3 Optically pumped lasing of ZnSe/ZnMgBeSe single quantum well laser / p70 (0081.jp2)
  31. 5-4 Current injection light emitting diode / p78 (0089.jp2)
  32. 5-5 Summary / p83 (0094.jp2)
  33. References / p84 (0095.jp2)
  34. Part II.Surface Treatment of ZnSe(100) Substrate and ZnSe Homoepitaxy / p85 (0096.jp2)
  35. Chapter6.Introduction / p85 (0096.jp2)
  36. 6-1 Background / p85 (0096.jp2)
  37. 6-2 Experimental / p87 (0098.jp2)
  38. References / p89 (0100.jp2)
  39. Chapter7.Surface Treatment of ZnSe(100)Substrates / p91 (0102.jp2)
  40. 7-1 Introduction / p91 (0102.jp2)
  41. 7-2 Chemical etching and XPS study / p92 (0103.jp2)
  42. 7-3 Thermal cleaning and RHEED observation / p100 (0111.jp2)
  43. 7-4 Summary / p105 (0116.jp2)
  44. References / p106 (0117.jp2)
  45. Chapter8.ZnSe Homoepitaxy and Characterization / p107 (0118.jp2)
  46. 8-1 Introduction / p107 (0118.jp2)
  47. 8-2 Experimental Procedure / p108 (0119.jp2)
  48. 8-3 Evaluation of ZnSe homoepitaxially grown on low defect ZnSe(100)substrate / p110 (0121.jp2)
  49. 8-4 Optical pumping of ZnMgSSe/ZnSe DH structures grown on ZnSe(100)substrate / p113 (0124.jp2)
  50. 8-5 Summary / p117 (0128.jp2)
  51. References / p119 (0130.jp2)
  52. Chapter9.Discussion&Conclusion / p121 (0132.jp2)
  53. LIST OF PUBLICATIONS / p124 (0135.jp2)
0アクセス

各種コード

  • NII論文ID(NAID)
    500000170951
  • NII著者ID(NRID)
    • 8000000171225
  • DOI(NDL)
  • NDL書誌ID
    • 000000335265
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
ページトップへ