Characterization of SIMOX (Separation-by-implanted-oxygen) materials and devices SIMOX基板とSIMOXデバイスの特性評価

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著者

    • 吉野, 明 ヨシノ, アキラ

書誌事項

タイトル

Characterization of SIMOX (Separation-by-implanted-oxygen) materials and devices

タイトル別名

SIMOX基板とSIMOXデバイスの特性評価

著者名

吉野, 明

著者別名

ヨシノ, アキラ

学位授与大学

慶応義塾大学

取得学位

博士(工学)

学位授与番号

乙第3259号

学位授与年月日

1999-03-04

注記・抄録

博士論文

目次

  1. 論文目録 / (0001.jp2)
  2. Abstract / p1 (0004.jp2)
  3. CONTENTS / p6 (0007.jp2)
  4. 1.Introduction to The SIMOX Technology / p1 (0009.jp2)
  5. 1.1 Silicon-on-insulator(SOI)technology / p2 (0010.jp2)
  6. 1.2 Various fabrication methods of SOI substrates / p4 (0011.jp2)
  7. 1.3 The SIMOX technology / p6 (0012.jp2)
  8. 1.4 The objective and the organization of this thesis / p10 (0014.jp2)
  9. References / p11 (0014.jp2)
  10. 2.Redistribution Process of Oxygen Atoms in SIMOX Substrates / p13 (0015.jp2)
  11. 2.1 Introduction / p14 (0016.jp2)
  12. 2.2 Experimental / p15 (0016.jp2)
  13. 2.3 Results and Discussion / p16 (0017.jp2)
  14. 2.4 Summary / p38 (0028.jp2)
  15. References / p39 (0028.jp2)
  16. 3.Formation Mechanisms of SOI Structures in SIMOX Substrates / p41 (0029.jp2)
  17. 3.1 Introduction / p42 (0030.jp2)
  18. 3.2 Experimental / p42 (0030.jp2)
  19. 3.3 Results and Discussion / p44 (0031.jp2)
  20. 3.4 Summary / p81 (0049.jp2)
  21. References / p84 (0051.jp2)
  22. 4.Dislocation Densities in SIMOX Substrates / p85 (0051.jp2)
  23. 4.1 Introduction / p86 (0052.jp2)
  24. 4.2 Experimental / p87 (0052.jp2)
  25. 4.3 Results and Discussion / p88 (0053.jp2)
  26. 4.4 Summary / p114 (0066.jp2)
  27. References / p115 (0066.jp2)
  28. 5.Fundamental Concepts for SOI Device Physics / p116 (0067.jp2)
  29. 5.1 Partially-depleted mode and fully-depleted mode SOI transistors / p117 (0067.jp2)
  30. 5.2 Floating-body effects in PD-mode SOI transistors / p122 (0070.jp2)
  31. 5.3 Interface coupling effects in FD-mode SOI transistors / p129 (0073.jp2)
  32. References / p137 (0077.jp2)
  33. 6.Front-and Back-Interface Trap Densities and Subthreshold Swings of Fully Depleted Mode NMOS/SIMOX Transistors / p138 (0078.jp2)
  34. 6.1 Introduction / p139 (0078.jp2)
  35. 6.2 Experimental / p140 (0079.jp2)
  36. 6.3 Results and Discussion / p141 (0079.jp2)
  37. 6.4 Summary / p162 (0090.jp2)
  38. References / p163 (0090.jp2)
  39. 7.Hot Carrier Effects in Fully Depleted Mode NMOS/SIMOX as Influenced by Back Interface Degradation / p165 (0091.jp2)
  40. 7.1 Introduction / p166 (0092.jp2)
  41. 7.2 Experimental / p167 (0092.jp2)
  42. 7.3 Results and Discussion / p168 (0093.jp2)
  43. 7.4 Summary / p182 (0100.jp2)
  44. References / p182 (0100.jp2)
  45. 8.The Essential Factors for High-Speed,Low-Power CMOS/SIMOX Circuits / p183 (0100.jp2)
  46. 8.1 Introduction / p184 (0101.jp2)
  47. 8.2 Experimental / p185 (0101.jp2)
  48. 8.3 Results and Discussion / p189 (0103.jp2)
  49. 8.4 Summary / p208 (0113.jp2)
  50. References / p209 (0113.jp2)
  51. 9.Performances of CMOS Circuits Fabricated on Low-Dose SIMOX Substrates / p211 (0114.jp2)
  52. 9.1 Introduction / p212 (0115.jp2)
  53. 9.2 Experimental / p213 (0115.jp2)
  54. 9.3 Results and discussion / p217 (0117.jp2)
  55. 9.4 Summary / p241 (0129.jp2)
  56. References / p242 (0130.jp2)
  57. 10.Summary / p243 (0130.jp2)
  58. 10.1 Summary of this dissertation / p244 (0131.jp2)
  59. 10.2 Suggested future works / p248 (0133.jp2)
  60. List of Published Papers / p250 (0134.jp2)
  61. List of Presentations at International Conferences / p251 (0134.jp2)
  62. List of Abbreviations and Acronyms / p252 (0135.jp2)
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各種コード

  • NII論文ID(NAID)
    500000171515
  • NII著者ID(NRID)
    • 8000000171789
  • DOI(NDL)
  • NDL書誌ID
    • 000000335829
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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