Gas source molecular beam epitaxial growth of indium gallium phosphide using tertiarybutylphosphine ターシャリブチルフォスフィンを用いたインジウムガリウムリンのガスソース分子線エピタキシャル成長

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Author

    • 齋, 寛展 サイ, ヒロノブ

Bibliographic Information

Title

Gas source molecular beam epitaxial growth of indium gallium phosphide using tertiarybutylphosphine

Other Title

ターシャリブチルフォスフィンを用いたインジウムガリウムリンのガスソース分子線エピタキシャル成長

Author

齋, 寛展

Author(Another name)

サイ, ヒロノブ

University

北海道大学

Types of degree

博士(工学)

Grant ID

甲第4759号

Degree year

1999-03-25

Note and Description

博士論文

Table of Contents

  1. Contents / p6 (0007.jp2)
  2. Chapter1 Introduction / p1 (0010.jp2)
  3. 1.1 Historical Background / p1 (0010.jp2)
  4. 1.2 Objective This Work / p5 (0014.jp2)
  5. 1.3 Synopsis of Each Chapter / p6 (0015.jp2)
  6. Reference / p8 (0017.jp2)
  7. Chapter2 A Survey of Epitaxial Growth and Characterization of [化学式] / p10 (0019.jp2)
  8. 2.1 Growth Methods of [化学式] layers / p10 (0019.jp2)
  9. 2.2 Characterization method of [化学式] / p24 (0033.jp2)
  10. Reference / p40 (0049.jp2)
  11. Chapter3 Gas Source Molecular Beam Epitaxial Growth of [化学式] lattice matched to GaAs / p43 (0052.jp2)
  12. 3.1 Gas-source molecular beam epitaxy(GSMBE) system / p43 (0052.jp2)
  13. 3.2 Properties of TBP Cracking Cells and Estimation of Cracking Efficiency / p51 (0060.jp2)
  14. 3.2 Effect of Growth Temperature on [化学式] growth / p53 (0062.jp2)
  15. 3.3 Discussion on Mechanism of Composition Change at High Tg / p62 (0071.jp2)
  16. 3.4 Conclusion / p66 (0075.jp2)
  17. Reference / p67 (0076.jp2)
  18. Chapter4 RHEED Study of Growth Mode of [化学式] Layers / p68 (0077.jp2)
  19. 4.1 In Situ Growth Monitoring of [化学式] by RHEED / p68 (0077.jp2)
  20. 4.2 Optimization of [化学式] by using RHEED Observation / p79 (0088.jp2)
  21. 4.4 Conclusion / p84 (0093.jp2)
  22. Reference / p86 (0095.jp2)
  23. Chapter5 Properties of In₀.₄₈Ga₀.₅₂P Layers / p87 (0096.jp2)
  24. 5.1 Surface Morphology of In₀.₄₈Ga₀.₅₂P Layers / p87 (0096.jp2)
  25. 5.2 XRD and PL Characterizations of Crystal Qualities / p91 (0100.jp2)
  26. 5.3 Electrical Properties / p100 (0109.jp2)
  27. 5.5 Conclusion / p110 (0119.jp2)
  28. Reference / p111 (0120.jp2)
  29. Chapter6 Characterization of In₀.₄₈Ga₀.₅₂P/GaAs Heterostructure Grown by GSMBE / p113 (0122.jp2)
  30. 6.1 Characteristics of In₀.₄₈Ga₀.₅₂P/GaAs Heterointerface and Band Lineup / p113 (0122.jp2)
  31. 6.2 Conclusion / p117 (0126.jp2)
  32. Reference / p119 (0128.jp2)
  33. Chapter7 Summary and Conclusion / p120 (0129.jp2)
8access

Codes

  • NII Article ID (NAID)
    500000172317
  • NII Author ID (NRID)
    • 8000000172592
  • DOI(NDL)
  • NDLBibID
    • 000000336631
  • Source
    • NDL ONLINE
    • NDL Digital Collections

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