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Growth structure and physical properties of Ni[1-x]Fe[x] alloy films dc plasma-sputter-deposited on Mgo and GaAs single crystals MgO&GaAs単結晶基板上の直流バイアスプラズマスパッタNi1-xFex系薄膜の構造及び物性

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著者

    • 楊, 季平 ヨウ, キヘイ

書誌事項

タイトル

Growth structure and physical properties of Ni[1-x]Fe[x] alloy films dc plasma-sputter-deposited on Mgo and GaAs single crystals

タイトル別名

MgO&GaAs単結晶基板上の直流バイアスプラズマスパッタNi1-xFex系薄膜の構造及び物性

著者名

楊, 季平

著者別名

ヨウ, キヘイ

学位授与大学

電気通信大学

取得学位

博士(理学)

学位授与番号

甲第164号

学位授与年月日

1999-03-24

注記・抄録

博士論文

目次

  1. 論文の和文要旨 / (0005.jp2)
  2. Content / p1 (0009.jp2)
  3. §1.Introduction / p1 (0014.jp2)
  4. 1.1.Sputter-Deposition / p1 (0014.jp2)
  5. 1.2.DC-Sputter-Deposition / p2 (0015.jp2)
  6. 1.3.Structure and Physical Properties of Sputter-Deposited Thin Films / p9 (0022.jp2)
  7. 1.4.Epitaxial Growth Phenomena / p18 (0031.jp2)
  8. 1.5.Historical Review of Ni₁₋χFeχ Films on Semiconductor or Insulator Substrate and Aims of the Present Investigation / p23 (0036.jp2)
  9. §2.Experimental Procedure / p25 (0038.jp2)
  10. 2.1.Preparations of Thin Films / p25 (0038.jp2)
  11. 2.2.Measurement and Analytical Techniques / p28 (0041.jp2)
  12. §3.Results and Discussions / p40 (0053.jp2)
  13. 3.1.Growth structure and electrical properties of Ni/GaAs(001) / p40 (0053.jp2)
  14. 3.2.Growth structure and properties of Ni-Fe alloy/MgO(001) / p48 (0061.jp2)
  15. 3.3.Initial growth structure of Ni₀.₃₀ Fe₀.₇₀ films on various substrates / p73 (0086.jp2)
  16. §4.Simulations and Discussions on Epitaxial Growth / p86 (0099.jp2)
  17. 4.1.Background / p86 (0099.jp2)
  18. 4.2.Models / p88 (0101.jp2)
  19. 4.3.Calculations of ⊿Ee(h)and [化学式] / p89 (0102.jp2)
  20. §5.Summary / p93 (0106.jp2)
  21. 5.1.Effect of negative dc bias voltage [化学式] / p93 (0106.jp2)
  22. 5.2.Ni/GaAs(001) / p93 (0106.jp2)
  23. 5.3.Ni₁₋χFeχ/MgO(001) / p94 (0107.jp2)
  24. 5.4.Pseudomorphous phenomenon / p94 (0107.jp2)
  25. §6.Future Scope / p96 (0109.jp2)
  26. 6.1.Ni/GaAs / p96 (0109.jp2)
  27. 6.2.Invar/M/MgO / p96 (0109.jp2)
  28. Acknowledgement / p97 (0110.jp2)
  29. References / p98 (0111.jp2)
  30. Appendix A.ESTIMATION ON AVERAGE BOMBARDING ENERGY OF Ar IONS BOMBARDING THE SUBSTRATE BIASED AT Vs / a-1 / (0118.jp2)
  31. 1.Formulation of average bombarding energy of Ar ions / a-1 / (0118.jp2)
  32. 2.Estimation on average bombarding energy of ions / a-2 / (0119.jp2)
  33. Appendix B.ELASTIC LATTICE ENERGY IN THE CRYSTALSIN CONTACT -Eq.(4-1) / a-5 / (0122.jp2)
  34. 1.Model / a-5 / (0122.jp2)
  35. 2.Governing equation / a-7 / (0124.jp2)
  36. 3.Solution / a-8 / (0125.jp2)
  37. 4.Energy / a-8 / (0125.jp2)
  38. 5.Discussion / a-9 / (0126.jp2)
  39. Appendix C.CRITICAL THICKNESS OF PSEUDOMORPHIC PHASE IN EPITAXIALLY GROWN CRYSTALS -Eq.(4-6) / a-11 / (0128.jp2)
  40. 1.The total energy / a-11 / (0128.jp2)
  41. 2.Minimizing strain / a-11 / (0128.jp2)
  42. List of related publications / p105 (0131.jp2)
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各種コード

  • NII論文ID(NAID)
    500000173291
  • NII著者ID(NRID)
    • 8000000173567
  • DOI(NDL)
  • NDL書誌ID
    • 000000337605
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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