Development of high-speed silicon devices and their design with advanced physical models 高速シリコンデバイスの開発とその設計の研究
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著者
書誌事項
- タイトル
-
Development of high-speed silicon devices and their design with advanced physical models
- タイトル別名
-
高速シリコンデバイスの開発とその設計の研究
- 著者名
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後藤, 広志
- 著者別名
-
ゴトウ, ヒロシ
- 学位授与大学
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広島大学
- 取得学位
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博士 (工学)
- 学位授与番号
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乙第3169号
- 学位授与年月日
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1999-02-10
注記・抄録
博士論文
目次
- Table of Contents / p5 (0006.jp2)
- Abstract / p2 (0003.jp2)
- Acknowledgments / p3 (0004.jp2)
- Chapter 1 Introduction / p1 (0010.jp2)
- 1.1 Motivation / p1 (0010.jp2)
- 1.2 Scope and Organization / p1 (0010.jp2)
- Chapter 2 Development of High-Speed Silicon Bipolar Devices / p4 (0012.jp2)
- 2.1 Historical Back Ground / p4 (0012.jp2)
- 2.2 Trench Isolation Techniques / p5 (0012.jp2)
- 2.3 Polysilicon Self-Aligned Structures / p19 (0019.jp2)
- 2.4 Physics-Based Bipolar Transistor Design / p37 (0028.jp2)
- Chapter 3 Performance Estimation of High-Speed Bipolar Device / p47 (0033.jp2)
- 3.1 Introduction / p47 (0033.jp2)
- 3.2 Strategy to Estimate ECL-Circuit Performance / p47 (0033.jp2)
- 3.3 Optimization of ECL-Circuit Performance / p54 (0037.jp2)
- 3.4 Favorable Silicon BJT Features and Its Limitation / p56 (0038.jp2)
- 3.5 Conclusion / p58 (0039.jp2)
- Chapter 4 Design Concept for High-Speed CMOS Device / p60 (0040.jp2)
- 4.1 Introduction / p60 (0040.jp2)
- 4.2 Requirements for High-Speed CMOS Device / p61 (0040.jp2)
- 4.3 Quarter and Subquarter Micron CMOS Technologies / p63 (0041.jp2)
- 4.4 Conclusion / p64 (0042.jp2)
- Chapter 5 Inverse Modeling Technique for MOSFET Design / p65 (0042.jp2)
- 5.1 Introduction / p65 (0042.jp2)
- 5.2 Inverse Modeling Procedure / p66 (0043.jp2)
- 5.3 Extraction of a Deep Submicron MOSFET Structure / p68 (0044.jp2)
- 5.4 Saturation Drain Current and Substrate Current / p77 (0048.jp2)
- 5.5 Device Characteristic Prediction / p79 (0049.jp2)
- 5.6 Conclusion / p80 (0050.jp2)
- Chapter 6 Carrier Transport in MOSFETs / p81 (0050.jp2)
- 6.1 Introduction / p81 (0050.jp2)
- 6.2 Modeling of Carrier Transport in MOSFETs / p82 (0051.jp2)
- 6.3 Impact Ionization in MOSFETs / p90 (0055.jp2)
- 6.4 Conclusion / p98 (0059.jp2)
- Chapter 7 Physics-Based MOSFET Design / p99 (0059.jp2)
- 7.1 Introduction / p99 (0059.jp2)
- 7.2 Hot Carrier Effects of nMOSFET / p100 (0060.jp2)
- 7.3 Physics-Based MOSFET Design / p104 (0062.jp2)
- 7.4 Conclusion / p106 (0063.jp2)
- Chapter 8 Conclusion / p107 (0063.jp2)
- 8.1 Summary / p107 (0063.jp2)
- 8.2 Future Work / p108 (0064.jp2)
- Bibliography / p110 (0065.jp2)
- List of Papers / p122 (0071.jp2)