Preparations of ferroelectric PbZrxTil-xO3 thin films and their applications to photoconductor-ferroelectric memory 強誘電体PbZrxTil-xO3薄膜の作製と光伝導・強誘電体メモリへの応用

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著者

    • 王, 文生 オウ, ブンセイ

書誌事項

タイトル

Preparations of ferroelectric PbZrxTil-xO3 thin films and their applications to photoconductor-ferroelectric memory

タイトル別名

強誘電体PbZrxTil-xO3薄膜の作製と光伝導・強誘電体メモリへの応用

著者名

王, 文生

著者別名

オウ, ブンセイ

学位授与大学

富山県立大学

取得学位

博士 (工学)

学位授与番号

甲第12号

学位授与年月日

2000-03-24

注記・抄録

博士論文

目次

  1. CONTENTS / p1 (0005.jp2)
  2. Preface / p1 (0003.jp2)
  3. Chapter 1 Introduction / p1 (0007.jp2)
  4. 1.1 Introduction / p1 (0007.jp2)
  5. 1.2 Photoconductive-Ferroelectric Memory / p3 (0008.jp2)
  6. 1.3 Current Materials / p6 (0010.jp2)
  7. References / p10 (0012.jp2)
  8. Chapter 2 Preparation and Properties of the Substrates and PLT Buffer Layer / p15 (0014.jp2)
  9. 2.1 Introduction / p15 (0014.jp2)
  10. 2.2 Sputtering Apparatus / p16 (0015.jp2)
  11. 2.3 Substrates / p18 (0016.jp2)
  12. 2.4 Preparation of SiO₂ Thin Film / p19 (0016.jp2)
  13. 2.5 Preparation of Ti, Pt and Ir Thin Film / p22 (0018.jp2)
  14. 2.6 Preparation of PLT Thin Film / p22 (0018.jp2)
  15. 2.7 Summary / p30 (0022.jp2)
  16. References / p32 (0023.jp2)
  17. Chapter 3 Preparation and Structure Properties of Rhombohedral PZT Thin Films by magnetron Sputtering Method / p35 (0024.jp2)
  18. 3.1 Introduction / p35 (0024.jp2)
  19. 3.2 Preparation of PLT, PZT Thin Films / p38 (0026.jp2)
  20. 3.3 Structural of PZT Films / p41 (0027.jp2)
  21. 3.4 Summary / p55 (0034.jp2)
  22. References / p56 (0035.jp2)
  23. Chapter 4 Electrical Properties of Rhombohedral PZT Thin Films by RF Magnetron Sputtering Method / p59 (0036.jp2)
  24. 4.1 Introduction / p59 (0036.jp2)
  25. 4.2 Preparation of Rhombohedral PZT Thin Films / p60 (0037.jp2)
  26. 4.3 Electric properties of Rhombohedral PZT Thin Films / p62 (0038.jp2)
  27. 4.4 Summary / p82 (0048.jp2)
  28. References / p83 (0048.jp2)
  29. Chapter 5 Preparation and Electrical Properties of Sol-Gel Zr-rich Derived PZT Thin Films / p85 (0049.jp2)
  30. 5.1 Introduction / p85 (0049.jp2)
  31. 5.2 Experimental Procedure / p86 (0050.jp2)
  32. 5.3 Structure of Sol-gel Derived Zr-rich PZT Thin Films / p89 (0051.jp2)
  33. 5.4 Electric properties of Sol-gel Derived Zr-rich PZT Thin Films / p92 (0053.jp2)
  34. 5.5 Summary / p97 (0055.jp2)
  35. References / p97 (0055.jp2)
  36. Chapter 6 Preparation and Properties of Amorphous Silicon,ITO Thin Films by RF Magnetron Sputtering Method / p99 (0056.jp2)
  37. 6.1 Introduction / p99 (0056.jp2)
  38. 6.2 Preparation and Properties of ITO Thin Films / p100 (0057.jp2)
  39. 6.3 Preparation of Amorphous Silicon Thin Films / p105 (0059.jp2)
  40. 6.4 Properties of Amorphous Silicon Thin Films / p105 (0059.jp2)
  41. 6.5 Summary / p110 (0062.jp2)
  42. References / p111 (0062.jp2)
  43. Chapter 7 Preparation of Photoconductive Ferroelectric Memory / p113 (0063.jp2)
  44. 7.1 Introduction / p113 (0063.jp2)
  45. 7.2 Principle of Photoconductive Ferroelectric Memory / p114 (0064.jp2)
  46. 7.3 Preparation of Photoconductive Ferroelectric Memory / p120 (0067.jp2)
  47. 7.4 Properties of Photoconductive Ferroelectric Memory / p120 (0067.jp2)
  48. 7.5 Summary / p127 (0070.jp2)
  49. References / p127 (0070.jp2)
  50. Chapter 8 Conclusions / p129 (0071.jp2)
  51. Acknowledgements / p135 (0074.jp2)
  52. List of Publications / p137 (0075.jp2)
  53. List of Abbreviations / p139 (0076.jp2)
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  • NII論文ID(NAID)
    500000187232
  • NII著者ID(NRID)
    • 8000000187515
  • DOI(NDL)
  • NDL書誌ID
    • 000000351546
  • データ提供元
    • NDL ONLINE
    • NDLデジタルコレクション

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