Quantitative high-resolution transmission electron microscopy and its application to structural analysis of semiconductor materials
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著者
書誌事項
- タイトル
-
Quantitative high-resolution transmission electron microscopy and its application to structural analysis of semiconductor materials
- 著者名
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西尾, 弘司
- 著者別名
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ニシオ, コウジ
- 学位授与大学
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京都工芸繊維大学
- 取得学位
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博士 (学術)
- 学位授与番号
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乙第99号
- 学位授与年月日
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2001-03-26
注記・抄録
博士論文
目次
- Contents / p3 (0004.jp2)
- Preface / p1 (0003.jp2)
- List of Publications / p5 (0005.jp2)
- 1 Approach to Quantitative High-Resolution Transmission Electron Microscopy / p1 (0006.jp2)
- 1.1 Equal Thickness Fringe Intensities of GaAs and InP Crystals / p1 (0003.jp2)
- 1.2 Equal Thickness Fringe Intensities of Si and MgO Crystals / p7 (0009.jp2)
- 1.3 Verification of Electron Microscopy Simulation / p19 (0015.jp2)
- References / p26 (0019.jp2)
- 2 Application to Quantitative Analysis of Semiconductor Materials / p29 (0020.jp2)
- 2.1 Interfaces in InGaAs/InP Multilayer Heterostructure / p29 (0020.jp2)
- 2.2 FeAs Precipitates Formed in GaAs/AlGaAs Heterostructure / p38 (0025.jp2)
- 2.3 AlAs/GaAs/AlGaAs Multilayer Heterostructure / p45 (0028.jp2)
- References / p50 (0031.jp2)
- Acknowledgements / p53 (0032.jp2)