Nonplanar oxidation and reduction of oxide leakage currents at silicon corners by rounding-off oxidation
収録刊行物
-
- IEEE Trans. Electron Devices
-
IEEE Trans. Electron Devices 34 (8), 1681-1687, 1987
- Tweet
詳細情報
-
- CRID
- 1571417126615811584
-
- NII論文ID
- 80003471158
-
- データソース種別
-
- CiNii Articles