Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide semiconductor transistors

• FLEETWOOD D. M.

収録刊行物

• Phys. Rev. Lett.

  Phys. Rev. Lett. 64 (5), 579-582, 1990

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• CRID: 1571417126640433536
• NII論文ID: 80005012797
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  • CiNii Articles