Generation of diamond nuclei by electric field in plasma chemical vapor deposition

• S. Yugo

  University of Electro-Communications, Choufu-shi, 182 Tokyo, Japan

• T. Kanai

  University of Electro-Communications, Choufu-shi, 182 Tokyo, Japan

• T. Kimura

  University of Electro-Communications, Choufu-shi, 182 Tokyo, Japan

• T. Muto

  University of Electro-Communications, Choufu-shi, 182 Tokyo, Japan

抄録

Generation of diamond nuclei has been realized on a silicon mirror surface in plasma chemical vapor deposition. Prior to the normal diamond growth process, a predeposition process of several minutes duration was introduced in which a high methane fraction in the feed gas was used and in which a negative bias voltage was applied to the substrate. This resulted in an enormous enhancement of the generation of diamond nuclei. For the onset of diamond nucleation the minimum voltage was −70 V and the minimum methane fraction in the methane-hydrogen feed gas was 5%. Density of a diamond nuclei as high as 1010/cm2 was attained with this method.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 58 (10), 1036-1038, 1991-03-11

  AIP Publishing

キーワード

• Physics and Astronomy (miscellaneous)

詳細情報

• CRID: 1361699995943906688
• NII論文ID: 80005764787
• DOI: 10.1063/1.104415
• ISSN: 10773118
• ISSN: 00036951
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/58/10/1036/18481123/1036_1_online.pdf
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