Novel metalorganic chemical vapor deposition system for GaN growth

• Shuji Nakamura

  Nichia Chemical Industries Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

• Yasuhiro Harada

  Nichia Chemical Industries Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

• Masayuki Seno

  Nichia Chemical Industries Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

抄録

A novel metalorganic chemical vapor deposition (MOCVD) system, which has two different flows, has been developed. One flow carries a reactant gas parallel to the substrate, and the other an inactive gas perpendicular to the substrate for the purpose of changing the direction of the reactant gas flow. The growth of a GaN film was attempted using this system, and a high quality, uniform film was obtained over a 2 in. sapphire substrate. The carrier concentration and Hall mobility are 1×1018/cm3 and 200 cm2/V s, respectively, which are the highest for GaN films grown directly on a sapphire substrate by the MOCVD method.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 58 (18), 2021-2023, 1991-05-06

  AIP Publishing

キーワード

• Physics and Astronomy (miscellaneous)

詳細情報

• CRID: 1363388845892161920
• NII論文ID: 80005887050
• DOI: 10.1063/1.105239
• ISSN: 10773118
• ISSN: 00036951
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/58/18/2021/18482029/2021_1_online.pdf
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