A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy

• LIN M. E.

収録刊行物

• Appl. Phys. Lett.

  Appl. Phys. Lett. 62 (26), 3479-3481, 1993

詳細情報

• CRID: 1571698601626486144
• NII論文ID: 80007141171
• NII書誌ID: AA00543431
• データソース種別:
  • CiNii Articles