Determining the lattice relaxation in semiconductor layer systems by x-ray diffraction
-
- Paul F. Fewster
- Philips Research Laboratories, Cross Oak Lane, Redhill, United Kingdom
-
- Norman L. Andrew
- Philips Research Laboratories, Cross Oak Lane, Redhill, United Kingdom
抄録
<jats:p>This paper illustrates the procedure for extracting structural information available from x-ray diffraction space mapping and topography. The methods of measuring, the residual strain, macroscopic tilts, microscopic tilts and their lateral dimensions, and the strain field disruption emanating from the interfacial defects are presented. Partially relaxed thick InGaAs layers on GaAs substrates were studied and it was concluded that the relaxation and macroscopic tilting were anisotropic, the microscopic tilting reduced with thickness, and the interfacial disruption did not continue to increase with increasing relaxation. A ‘‘mosaic grain growth’’ model is postulated to account for the diminishing microscopic tilt spread and increasing topographic contrast with layer thickness.</jats:p>
収録刊行物
-
- Journal of Applied Physics
-
Journal of Applied Physics 74 (5), 3121-3125, 1993-09-01
AIP Publishing
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1363670320658205824
-
- NII論文ID
- 80007248871
-
- DOI
- 10.1063/1.354578
-
- ISSN
- 10897550
- 00218979
-
- データソース種別
-
- Crossref
- CiNii Articles