A gas-Phase and Surface Kinetics Model for Silicon Epitaxial Growth with SiH_2Cl_2 in an RTCVD Reactor

• HIERLEMAN M.

収録刊行物

• J. Electrochem. Soc.

  J. Electrochem. Soc. 142 259-266, 1994

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• CRID: 1570291226761488000
• NII論文ID: 80008041593
• データソース種別:
  • CiNii Articles