Spectroscopic observation of interface states of ultrathin silicon oxide

DOI PDF 被引用文献9件
  • Y. Yamashita
    Department of Chemistry, Faculty of Engineering Science
  • K. Namba
    Department of Chemistry, Faculty of Engineering Science
  • Y. Nakato
    Department of Chemistry, Faculty of Engineering Science
  • Y. Nishioka
    Texas Instruments Tsukuba Research and Development Center Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
  • H. Kobayashi
    PRESTO, Research Development Corporation of Japan

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<jats:p>Interface states in the Si band gap present at oxide/Si(100) interfaces for ∼3-nm-thick Pt/2.1∼3.6-nm-thick silicon oxide/n-Si(100) metal–oxide–semiconductor devices are investigated by measurements of x-ray photoelectron spectra under biases between the Pt layer and the Si substrate, and their energy distribution is obtained by analyzing the amount of the energy shift of the substrate Si 2p3/2 peak measured as a function of the bias voltage. All the interface states observed using this new technique have discrete energy levels, showing that they are due to defect states. For the oxide layer formed in H2SO4+H2O2, the interface states have three density maxima at ∼0.3, ∼0.5, and ∼0.7 eV above the valence-band maximum (VBM). For the oxide layer produced in HNO3, two density maxima appear at ∼0.3 and ∼0.7 eV above the VBM. The energy distribution for the oxide layer grown in HCl+H2O2 has one peak at ∼0.5 eV. The 0.5 eV interface state is attributed to the isolated Si dangling bond defect. The 0.3 and 0.7 eV interface states are, respectively, due to Si dangling bonds with which Si and oxygen atoms in the silicon oxide layer interact weakly. The oxide layer formed in HCl+H2O2 has the highest-density interface states. The oxide layer produced in HNO3 has the lowest-density interface states and, thus, the final cleaning using HNO3 is recommended for the device fabrication.</jats:p>

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