Resonant tunneling through a self-assembled Si quantum dot

DOI PDF 被引用文献32件
  • M. Fukuda
    Department of Electrical Engineering, Hiroshima University, Kagamiyama 1-4-1, Higashi-Hiroshima 739, Japan
  • K. Nakagawa
    Department of Electrical Engineering, Hiroshima University, Kagamiyama 1-4-1, Higashi-Hiroshima 739, Japan
  • S. Miyazaki
    Department of Electrical Engineering, Hiroshima University, Kagamiyama 1-4-1, Higashi-Hiroshima 739, Japan
  • M. Hirose
    Department of Electrical Engineering, Hiroshima University, Kagamiyama 1-4-1, Higashi-Hiroshima 739, Japan

抄録

<jats:p>Nanometer-scale Si quantum dots have been spontaneously fabricated on SiO2 by controlling the early stages of low-pressure chemical vapor deposition from pure silane. The tunneling current through Au/1 nm-SiO2/a single Si quantum dot/1 nm-SiO2/n+-Si(100) double-barrier structures has exhibited the clear current bump or negative conductance at 300 K with a peak current to valley ratio as high as 10.</jats:p>

収録刊行物

被引用文献 (32)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ