Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals

• Naoyuki Ueda

  Institute for Molecular Science, Myodaiji, Okazaki 444, Japan

• Hideo Hosono

  Institute for Molecular Science, Myodaiji, Okazaki 444, Japan

• Ryuta Waseda

  Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226, Japan

• Hiroshi Kawazoe

  Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226, Japan

抄録

β- Ga 2 O 3 single crystals were grown by the floating zone method and their conductivity along the b axis was controlled from <10−9 to 38 Ω−1 cm−1 by changing the growth atmosphere. By using feed rods doped with Sn, the grown crystal became highly conductive even under oxidative atmosphere. The optical transmission spectra showed that the β-Ga2O3 single crystal with 0.32 mm was transparent in the visible and ultraviolet region, with 20% transmittance at the fourth-harmonic wave of the Nd:YAG laser (266 nm). The band-gap widening was observed with the increasing of the carrier concentration. It is expected that the light of the KrF laser can be transmitted in the heavily doped β-Ga2O3.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 70 (26), 3561-3563, 1997-06-30

  AIP Publishing

キーワード

• Physics and Astronomy (miscellaneous)

詳細情報

• CRID: 1363951793285808000
• NII論文ID: 80009730879
• DOI: 10.1063/1.119233
• ISSN: 10773118
• ISSN: 00036951
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/70/26/3561/18527551/3561_1_online.pdf
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