A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires
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- Alfredo M. Morales
- A. M. Morales, Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA.
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- Charles M. Lieber
- A. M. Morales, Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA.
抄録
<jats:p>A method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth was developed for the synthesis of semiconductor nanowires. In this process, laser ablation was used to prepare nanometer-diameter catalyst clusters that define the size of wires produced by VLS growth. This approach was used to prepare bulk quantities of uniform single-crystal silicon and germanium nanowires with diameters of 6 to 20 and 3 to 9 nanometers, respectively, and lengths ranging from 1 to 30 micrometers. Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.</jats:p>
収録刊行物
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- Science
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Science 279 (5348), 208-211, 1998-01-09
American Association for the Advancement of Science (AAAS)
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詳細情報
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- CRID
- 1360574095181278848
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- NII論文ID
- 80010086439
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- ISSN
- 10959203
- 00368075
- http://id.crossref.org/issn/00368075
- http://id.crossref.org/issn/01934511
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- データソース種別
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