Structural and optical characterization of CdS films grown by photochemical deposition

• Masaya, Ichimura

• Fumitaka, Goto

• Eisuke, Arai

抄録

CdS thin films are grown by photochemical deposition from an aqueous solution and characterized by x-ray diffraction (XRD), Raman spectroscopy, photoluminescence measurement, and optical transmission spectroscopy. The films are deposited at room temperature and annealed at temperatures up to 500°C. The as-deposited film is dominantly zinc blende cubic. The cubic phase remains dominant until the annealing temperature becomes higher than 400°C. By the annealing at 450°C, the XRD pattern turns to that of hexagonal phase. Moreover, its peak width decreases and the near-band-edge luminescence begins to be observed. The band gap is decreased by annealing below 400°C and then abruptly increased by the annealing at 450°C. This annealing behavior of the band gap is interpreted considering the quantum size effects, the band tail due to disorder, and the cubic-hexagonal transition.

収録刊行物

• JOURNAL OF APPLIED PHYSICS

  JOURNAL OF APPLIED PHYSICS 85 (10), 7411-7417, 1999-05-15

  American Institute of Physics

キーワード

• General Physics and Astronomy

詳細情報

• CRID: 1050282812468984320
• NII論文ID: 120005975453
• NII論文ID: 80011078733
• NII書誌ID: AA00693547
• ISSN: 00218979
• ISSN: 10897550
• DOI: 10.1063/1.369371
• Web Site: http://id.nii.ac.jp/1476/00004694/
• Web Site: https://pubs.aip.org/aip/jap/article-pdf/85/10/7411/19154666/7411_1_online.pdf
• 本文言語コード: en
• 資料種別: journal article
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