Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
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- S. S. P. Parkin
- IBM Research Division, Almaden Research Center, San Jose, California 95120
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- K. P. Roche
- IBM Research Division, Almaden Research Center, San Jose, California 95120
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- M. G. Samant
- IBM Research Division, Almaden Research Center, San Jose, California 95120
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- P. M. Rice
- IBM Research Division, Almaden Research Center, San Jose, California 95120
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- R. B. Beyers
- IBM Research Division, Almaden Research Center, San Jose, California 95120
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- R. E. Scheuerlein
- IBM Storage Division, San Jose, California 95120
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- E. J. O’Sullivan
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
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- S. L. Brown
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
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- J. Bucchigano
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
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- D. W. Abraham
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
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- Yu Lu
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
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- M. Rooks
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
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- P. L. Trouilloud
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
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- R. A. Wanner
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
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- W. J. Gallagher
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
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抄録
<jats:p>Exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. MTJ elements have been developed which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2, and with MR values enhanced by moderate thermal treatments. Large MR values are observed in magnetic elements with areas as small as 0.17 (μm)2. The magnetic field dependent current–voltage characteristics of an MTJ element integrated with a silicon diode are analyzed to extract the MR properties of the MTJ element itself.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 85 (8), 5828-5833, 1999-04-15
AIP Publishing
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詳細情報
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- CRID
- 1361137046115792768
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- NII論文ID
- 80011089725
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- NII書誌ID
- AA00693547
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- DOI
- 10.1063/1.369932
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- ISSN
- 10897550
- 00218979
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- データソース種別
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