Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

DOI PDF 被引用文献96件
  • S. S. P. Parkin
    IBM Research Division, Almaden Research Center, San Jose, California 95120
  • K. P. Roche
    IBM Research Division, Almaden Research Center, San Jose, California 95120
  • M. G. Samant
    IBM Research Division, Almaden Research Center, San Jose, California 95120
  • P. M. Rice
    IBM Research Division, Almaden Research Center, San Jose, California 95120
  • R. B. Beyers
    IBM Research Division, Almaden Research Center, San Jose, California 95120
  • R. E. Scheuerlein
    IBM Storage Division, San Jose, California 95120
  • E. J. O’Sullivan
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
  • S. L. Brown
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
  • J. Bucchigano
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
  • D. W. Abraham
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
  • Yu Lu
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
  • M. Rooks
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
  • P. L. Trouilloud
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
  • R. A. Wanner
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10698
  • W. J. Gallagher
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10698

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<jats:p>Exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. MTJ elements have been developed which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2, and with MR values enhanced by moderate thermal treatments. Large MR values are observed in magnetic elements with areas as small as 0.17 (μm)2. The magnetic field dependent current–voltage characteristics of an MTJ element integrated with a silicon diode are analyzed to extract the MR properties of the MTJ element itself.</jats:p>

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