Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems

DOI PDF 被引用文献22件
  • Kenji Momose
    Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi, 441-8580, Japan
  • Hiroo Yonezu
    Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi, 441-8580, Japan
  • Yasuhiro Fujimoto
    Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi, 441-8580, Japan
  • Yuzo Furukawa
    Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi, 441-8580, Japan
  • Yoshifumi Motomura
    Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi, 441-8580, Japan
  • Kunio Aiki
    Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi, 441-8580, Japan

抄録

<jats:p>We proposed a Si/III–V–N compound semiconductors/Si structure, which is applicable to optoelectronic integrated circuits (OEICs). The feature of this structure is that optoelectronic devices and Si electronic devices could be fabricated by low-temperature planar process at the same time. A dislocation-free and lattice-matched Si/GaP1−xNx/Si (x=2.9%) structure, which is a basic structure for OEICs, was grown by molecular-beam epitaxy. The images of transmission electron microscopy revealed that there were no threading dislocations and misfit dislocations in the epitaxial layers. It was clarified that the Si and GaP1−xNx layers were lattice-matched to Si and had structural high crystalline quality comparable to Si substrates.</jats:p>

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