Reliability evaluation of HfSiON gate dielectric film with 12.8 A SiO2 equivalent thickness

• SHANWARE A.

収録刊行物

• Proceedings of IEDM Tech. Digest, 2001

  Proceedings of IEDM Tech. Digest, 2001 2001

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• CRID: 1570291226803963904
• NII論文ID: 80015142346
• データソース種別:
  • CiNii Articles